Details
| Original language | English |
|---|---|
| Pages (from-to) | 411-416 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 379 |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | 1995 MRS Spring Meeting - San Francisco, United States Duration: 17 Apr 1995 → 20 Apr 1995 |
Abstract
Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm-3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga 'memory effect' of the UHV equipment.
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Research Society Symposium - Proceedings, Vol. 379, 1995, p. 411-416.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source
AU - Lippert, G.
AU - Osten, H. J.
AU - Kruger, D.
PY - 1995
Y1 - 1995
N2 - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm-3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga 'memory effect' of the UHV equipment.
AB - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm-3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga 'memory effect' of the UHV equipment.
UR - http://www.scopus.com/inward/record.url?scp=0029509910&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0029509910
VL - 379
SP - 411
EP - 416
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - 1995 MRS Spring Meeting
Y2 - 17 April 1995 through 20 April 1995
ER -