Details
| Original language | English |
|---|---|
| Title of host publication | 2005 International Symposium on Electromagnetic Compatibility |
| Subtitle of host publication | EMC |
| Pages | 489-494 |
| Number of pages | 6 |
| Publication status | Published - 2005 |
| Event | 2005 International Symposium on Electromagnetic Compatibility, EMC 2005 - Chicago, United States Duration: 8 Aug 2005 → 12 Aug 2005 |
Publication series
| Name | IEEE International Symposium on Electromagnetic Compatibility |
|---|---|
| Volume | 2 |
| ISSN (Print) | 1077-4076 |
Abstract
In this paper the destruction effects of semiconductor devices after impact of fast transient electromagnetic pulses are investigated. Different logic devices like NANDs and Inverter were exposed to high amplitude transient pulses. The pulses have been applied as field threats and as conducted threats. Furthermore a simulation of the destruction effects with the finite element method (FEM) has been performed.
Keywords
- Electromagnetic pulse, EMP, FEM, Finite element method, Semiconducter devices, Susceptibility, UWB
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2005 International Symposium on Electromagnetic Compatibility: EMC. 2005. p. 489-494 1513564 (IEEE International Symposium on Electromagnetic Compatibility; Vol. 2).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Hardware and Software Simulation of Transient Pulse Impact on Integrated Circuits
AU - Korte, S.
AU - Camp, M.
AU - Garbe, H.
PY - 2005
Y1 - 2005
N2 - In this paper the destruction effects of semiconductor devices after impact of fast transient electromagnetic pulses are investigated. Different logic devices like NANDs and Inverter were exposed to high amplitude transient pulses. The pulses have been applied as field threats and as conducted threats. Furthermore a simulation of the destruction effects with the finite element method (FEM) has been performed.
AB - In this paper the destruction effects of semiconductor devices after impact of fast transient electromagnetic pulses are investigated. Different logic devices like NANDs and Inverter were exposed to high amplitude transient pulses. The pulses have been applied as field threats and as conducted threats. Furthermore a simulation of the destruction effects with the finite element method (FEM) has been performed.
KW - Electromagnetic pulse
KW - EMP
KW - FEM
KW - Finite element method
KW - Semiconducter devices
KW - Susceptibility
KW - UWB
UR - http://www.scopus.com/inward/record.url?scp=33746630961&partnerID=8YFLogxK
U2 - 10.1109/ISEMC.2005.1513564
DO - 10.1109/ISEMC.2005.1513564
M3 - Conference contribution
AN - SCOPUS:33746630961
SN - 0780393805
SN - 9780780393806
T3 - IEEE International Symposium on Electromagnetic Compatibility
SP - 489
EP - 494
BT - 2005 International Symposium on Electromagnetic Compatibility
T2 - 2005 International Symposium on Electromagnetic Compatibility, EMC 2005
Y2 - 8 August 2005 through 12 August 2005
ER -