Details
| Original language | English |
|---|---|
| Title of host publication | 2009 3rd International Conference on Signals, Circuits & Systems |
| Subtitle of host publication | (SCS) |
| Publication status | Published - 2009 |
| Event | 3rd International Conference on Signals, Circuits and Systems, SCS 2009 - Medenine, Tunisia Duration: 6 Nov 2009 → 8 Nov 2009 |
Abstract
Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. On Si(100), crystalline Gd2O3 grows usually as (110)-oriented domains, with two orthogonal in-plane orientations. Layers grown under best vacuum conditions often exhibit poor dielectric properties due to the formation of crystalline interfacial silicide inclusions. Additional oxygen supply during growth improves the dielectric properties significantly. Layers grown by an optimized MBE process display a sufficiently high-K value to achieve equivalent oxide thickness values < 1 nm, combined with ultralow leakage current densities, good reliability, and high electrical breakdown voltage. A variety of MOS capacitors and field effect transistors has been fabricated based on these layers. Efficient manipulation of Si(100) 4° miscut substrate surfaces can lead to single domain epitaxial Gd2O3 layer. Such epi-Gd2O3 layers exhibited significant lower leakage currents compared to the commonly obtained epitaxial layers with two orthogonal domains. For capacitance equivalent thicknesses below 1 nm, this differences disappear, indicating that for ultrathin layers direct tunneling becomes dominating.
Keywords
- Gadolinium oxide, Gate dielectrics, High-k materials, Molecular beam epitaxy
ASJC Scopus subject areas
- Computer Science(all)
- Computer Networks and Communications
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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2009 3rd International Conference on Signals, Circuits & Systems: (SCS). 2009. 5414212.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Growth of Epitaxial Lanthanide Oxide based Gate Dielectrics
AU - Osten, H. J.
AU - Laha, A.
AU - Bugiel, E.
AU - Schwendt, D.
AU - Fissel, A.
N1 - ACKNOWLEDGEMENTS: This paper summarizes part of the work we have been doing over the last years. We are in particular grateful to M. Czernohorsky, R. Dargis, J. Krügener, D. Tetzlaff, and J.X. Wang for their various contributions. We are also grateful to our partners all over the world for their support and collaboration. Part of this work was supported by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS and the MegaEpos projects
PY - 2009
Y1 - 2009
N2 - Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. On Si(100), crystalline Gd2O3 grows usually as (110)-oriented domains, with two orthogonal in-plane orientations. Layers grown under best vacuum conditions often exhibit poor dielectric properties due to the formation of crystalline interfacial silicide inclusions. Additional oxygen supply during growth improves the dielectric properties significantly. Layers grown by an optimized MBE process display a sufficiently high-K value to achieve equivalent oxide thickness values < 1 nm, combined with ultralow leakage current densities, good reliability, and high electrical breakdown voltage. A variety of MOS capacitors and field effect transistors has been fabricated based on these layers. Efficient manipulation of Si(100) 4° miscut substrate surfaces can lead to single domain epitaxial Gd2O3 layer. Such epi-Gd2O3 layers exhibited significant lower leakage currents compared to the commonly obtained epitaxial layers with two orthogonal domains. For capacitance equivalent thicknesses below 1 nm, this differences disappear, indicating that for ultrathin layers direct tunneling becomes dominating.
AB - Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. On Si(100), crystalline Gd2O3 grows usually as (110)-oriented domains, with two orthogonal in-plane orientations. Layers grown under best vacuum conditions often exhibit poor dielectric properties due to the formation of crystalline interfacial silicide inclusions. Additional oxygen supply during growth improves the dielectric properties significantly. Layers grown by an optimized MBE process display a sufficiently high-K value to achieve equivalent oxide thickness values < 1 nm, combined with ultralow leakage current densities, good reliability, and high electrical breakdown voltage. A variety of MOS capacitors and field effect transistors has been fabricated based on these layers. Efficient manipulation of Si(100) 4° miscut substrate surfaces can lead to single domain epitaxial Gd2O3 layer. Such epi-Gd2O3 layers exhibited significant lower leakage currents compared to the commonly obtained epitaxial layers with two orthogonal domains. For capacitance equivalent thicknesses below 1 nm, this differences disappear, indicating that for ultrathin layers direct tunneling becomes dominating.
KW - Gadolinium oxide
KW - Gate dielectrics
KW - High-k materials
KW - Molecular beam epitaxy
UR - http://www.scopus.com/inward/record.url?scp=77951440374&partnerID=8YFLogxK
U2 - 10.1109/ICSCS.2009.5414212
DO - 10.1109/ICSCS.2009.5414212
M3 - Conference contribution
AN - SCOPUS:77951440374
SN - 9781424443987
BT - 2009 3rd International Conference on Signals, Circuits & Systems
T2 - 3rd International Conference on Signals, Circuits and Systems, SCS 2009
Y2 - 6 November 2009 through 8 November 2009
ER -