Growth of crystalline praseodymium oxide on silicon

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. J. Osten
  • J. P. Liu
  • E. Bugiel
  • H. J. Muüssig
  • P. Zaumseil

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)229-234
Number of pages6
JournalJournal of crystal growth
Volume235
Issue number1-4
Early online date6 Nov 2001
Publication statusPublished - Feb 2002
Externally publishedYes

Abstract

We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.

Keywords

    A3. Molecular beam epitaxy, B1. Oxides, B1. Rare earth compounds, B2. Dielectric materials

ASJC Scopus subject areas

Cite this

Growth of crystalline praseodymium oxide on silicon. / Osten, H. J.; Liu, J. P.; Bugiel, E. et al.
In: Journal of crystal growth, Vol. 235, No. 1-4, 02.2002, p. 229-234.

Research output: Contribution to journal › Article › Research › peer review

Osten, HJ, Liu, JP, Bugiel, E, Muüssig, HJ & Zaumseil, P 2002, 'Growth of crystalline praseodymium oxide on silicon', Journal of crystal growth, vol. 235, no. 1-4, pp. 229-234. https://doi.org/10.1016/S0022-0248(01)01777-8
Osten, H. J., Liu, J. P., Bugiel, E., Muüssig, H. J., & Zaumseil, P. (2002). Growth of crystalline praseodymium oxide on silicon. Journal of crystal growth, 235(1-4), 229-234. https://doi.org/10.1016/S0022-0248(01)01777-8
Osten HJ, Liu JP, Bugiel E, Muüssig HJ, Zaumseil P. Growth of crystalline praseodymium oxide on silicon. Journal of crystal growth. 2002 Feb;235(1-4):229-234. Epub 2001 Nov 6. doi: 10.1016/S0022-0248(01)01777-8
Osten, H. J. ; Liu, J. P. ; Bugiel, E. et al. / Growth of crystalline praseodymium oxide on silicon. In: Journal of crystal growth. 2002 ; Vol. 235, No. 1-4. pp. 229-234.
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@article{ab3714a9aa4b489a8de4b23f17fd6125,
title = "Growth of crystalline praseodymium oxide on silicon",
abstract = "We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.",
keywords = "A3. Molecular beam epitaxy, B1. Oxides, B1. Rare earth compounds, B2. Dielectric materials",
author = "Osten, {H. J.} and Liu, {J. P.} and E. Bugiel and Mu{\"u}ssig, {H. J.} and P. Zaumseil",
year = "2002",
month = feb,
doi = "10.1016/S0022-0248(01)01777-8",
language = "English",
volume = "235",
pages = "229--234",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

Download

TY - JOUR

T1 - Growth of crystalline praseodymium oxide on silicon

AU - Osten, H. J.

AU - Liu, J. P.

AU - Bugiel, E.

AU - Muüssig, H. J.

AU - Zaumseil, P.

PY - 2002/2

Y1 - 2002/2

N2 - We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.

AB - We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.

KW - A3. Molecular beam epitaxy

KW - B1. Oxides

KW - B1. Rare earth compounds

KW - B2. Dielectric materials

UR - http://www.scopus.com/inward/record.url?scp=0036467104&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01777-8

DO - 10.1016/S0022-0248(01)01777-8

M3 - Article

AN - SCOPUS:0036467104

VL - 235

SP - 229

EP - 234

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

IS - 1-4

ER -