Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition

Research output: Contribution to journal › Article › Research › peer review

Authors

  • Andrian P. Milanov
  • Ke Xu
  • Apurba Laha
  • Eberhard Bugiel
  • Ramadurai Ranjith
  • Dominik Schwendt
  • H. Jörg Osten
  • Harish Parala
  • Roland A. Fischer
  • Anjana Devi

Research Organisations

External Research Organisations

  • Ruhr-Universität Bochum
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Details

Original languageEnglish
Pages (from-to)36-37
Number of pages2
JournalJournal of the American Chemical Society
Volume132
Issue number1
Early online date14 Dec 2009
Publication statusPublished - 13 Jan 2010

Abstract

(Figure Presented) This work documents the first example of deposition of high-quality Gd2O3 thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG) 3]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.

ASJC Scopus subject areas

Cite this

Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition. / Milanov, Andrian P.; Xu, Ke; Laha, Apurba et al.
In: Journal of the American Chemical Society, Vol. 132, No. 1, 13.01.2010, p. 36-37.

Research output: Contribution to journal › Article › Research › peer review

Milanov, AP, Xu, K, Laha, A, Bugiel, E, Ranjith, R, Schwendt, D, Osten, HJ, Parala, H, Fischer, RA & Devi, A 2010, 'Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition', Journal of the American Chemical Society, vol. 132, no. 1, pp. 36-37. https://doi.org/10.1021/ja909102j
Milanov, A. P., Xu, K., Laha, A., Bugiel, E., Ranjith, R., Schwendt, D., Osten, H. J., Parala, H., Fischer, R. A., & Devi, A. (2010). Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition. Journal of the American Chemical Society, 132(1), 36-37. https://doi.org/10.1021/ja909102j
Milanov AP, Xu K, Laha A, Bugiel E, Ranjith R, Schwendt D et al. Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition. Journal of the American Chemical Society. 2010 Jan 13;132(1):36-37. Epub 2009 Dec 14. doi: 10.1021/ja909102j
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abstract = "(Figure Presented) This work documents the first example of deposition of high-quality Gd2O3 thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG) 3]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.",
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AU - Laha, Apurba

AU - Bugiel, Eberhard

AU - Ranjith, Ramadurai

AU - Schwendt, Dominik

AU - Osten, H. Jörg

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AU - Fischer, Roland A.

AU - Devi, Anjana

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