Details
| Original language | English |
|---|---|
| Article number | 001 |
| Pages (from-to) | 1289-1302 |
| Number of pages | 14 |
| Journal | Semiconductor Science and Technology |
| Volume | 10 |
| Issue number | 10 |
| Publication status | Published - 1995 |
Abstract
Advances made in the growth and properties of CSi and CSiGe pseudomorphic strained layers are reviewed. The solubility of C in Si is small (3.5*1017 atoms/cm3 near the melting point). However, high-quality strained layers of the alloys with considerably larger C concentrations have been grown using MBE, CVD and solid-phase epitaxy methods. A careful control of the growth rate and temperature is necessary to avoid formation of silicon carbide. In high-quality layers, most of the C atoms occupy lattice positions of the Si or SiGe host crystals and a substitutional alloy is formed although the equilibrium volume of C atoms is only 30% of that of Si. The formation and stability of alloys of atoms with large differences in size is a topic of fundamental interest. Experimental and theoretical investigations have focused on the microscopic structure of substitutional Si 1-x-yGexCy alloys. C compensates the compressive strain produced by Ge in the pseudomorphic layers grown on a Si substrate. From Raman studies of the microscopic strain in substitutional Si1-x-yGexCy alloys it has been concluded that Si-Si bonds experience a considerable local deformation even in strain-compensated alloys. The pair interaction of substitutional C atoms in an Si lattice and the possibility of forming ordered alloys have been studied theoretically. It has been found that the interaction of pairs of substitutional C atoms is attractive for special atomic configurations. Information available on electronic properties is rather meagre. Recent theoretical work shows that the bandgap of the alloy should decrease with C concentration. Experiments to confirm this have not yet been performed. Using strain-compensated alloys it is possible to grow symmetrically strained superlattices without the need of growing buffer layers. Si1-x-yGexCy strained layers are likely to be very useful for passive applications such as buffer layers. Considerably more work is required to determine their utility for active device applications.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Semiconductor Science and Technology, Vol. 10, No. 10, 001, 1995, p. 1289-1302.
Research output: Contribution to journal › Review article › Research › peer review
}
TY - JOUR
T1 - Growth and properties of strained Si1-x-yGexC y layers
AU - Jain, S. C.
AU - Osten, H. J.
AU - Dietrich, B.
AU - Rücker, H.
PY - 1995
Y1 - 1995
N2 - Advances made in the growth and properties of CSi and CSiGe pseudomorphic strained layers are reviewed. The solubility of C in Si is small (3.5*1017 atoms/cm3 near the melting point). However, high-quality strained layers of the alloys with considerably larger C concentrations have been grown using MBE, CVD and solid-phase epitaxy methods. A careful control of the growth rate and temperature is necessary to avoid formation of silicon carbide. In high-quality layers, most of the C atoms occupy lattice positions of the Si or SiGe host crystals and a substitutional alloy is formed although the equilibrium volume of C atoms is only 30% of that of Si. The formation and stability of alloys of atoms with large differences in size is a topic of fundamental interest. Experimental and theoretical investigations have focused on the microscopic structure of substitutional Si 1-x-yGexCy alloys. C compensates the compressive strain produced by Ge in the pseudomorphic layers grown on a Si substrate. From Raman studies of the microscopic strain in substitutional Si1-x-yGexCy alloys it has been concluded that Si-Si bonds experience a considerable local deformation even in strain-compensated alloys. The pair interaction of substitutional C atoms in an Si lattice and the possibility of forming ordered alloys have been studied theoretically. It has been found that the interaction of pairs of substitutional C atoms is attractive for special atomic configurations. Information available on electronic properties is rather meagre. Recent theoretical work shows that the bandgap of the alloy should decrease with C concentration. Experiments to confirm this have not yet been performed. Using strain-compensated alloys it is possible to grow symmetrically strained superlattices without the need of growing buffer layers. Si1-x-yGexCy strained layers are likely to be very useful for passive applications such as buffer layers. Considerably more work is required to determine their utility for active device applications.
AB - Advances made in the growth and properties of CSi and CSiGe pseudomorphic strained layers are reviewed. The solubility of C in Si is small (3.5*1017 atoms/cm3 near the melting point). However, high-quality strained layers of the alloys with considerably larger C concentrations have been grown using MBE, CVD and solid-phase epitaxy methods. A careful control of the growth rate and temperature is necessary to avoid formation of silicon carbide. In high-quality layers, most of the C atoms occupy lattice positions of the Si or SiGe host crystals and a substitutional alloy is formed although the equilibrium volume of C atoms is only 30% of that of Si. The formation and stability of alloys of atoms with large differences in size is a topic of fundamental interest. Experimental and theoretical investigations have focused on the microscopic structure of substitutional Si 1-x-yGexCy alloys. C compensates the compressive strain produced by Ge in the pseudomorphic layers grown on a Si substrate. From Raman studies of the microscopic strain in substitutional Si1-x-yGexCy alloys it has been concluded that Si-Si bonds experience a considerable local deformation even in strain-compensated alloys. The pair interaction of substitutional C atoms in an Si lattice and the possibility of forming ordered alloys have been studied theoretically. It has been found that the interaction of pairs of substitutional C atoms is attractive for special atomic configurations. Information available on electronic properties is rather meagre. Recent theoretical work shows that the bandgap of the alloy should decrease with C concentration. Experiments to confirm this have not yet been performed. Using strain-compensated alloys it is possible to grow symmetrically strained superlattices without the need of growing buffer layers. Si1-x-yGexCy strained layers are likely to be very useful for passive applications such as buffer layers. Considerably more work is required to determine their utility for active device applications.
UR - http://www.scopus.com/inward/record.url?scp=0029386432&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/10/10/001
DO - 10.1088/0268-1242/10/10/001
M3 - Review article
AN - SCOPUS:0029386432
VL - 10
SP - 1289
EP - 1302
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
M1 - 001
ER -