Details
| Original language | English |
|---|---|
| Article number | 043109 |
| Journal | Applied Physics Letters |
| Volume | 106 |
| Issue number | 4 |
| Publication status | Published - 30 Jan 2015 |
Abstract
We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types of roughness, the step density of the substrate and the roughness of the sidewalls, were identified as being detrimental to the transport properties of these ribbons. By means of 4-point probe experiments, single channel ballistic transport was observed with a mean free path limited by the width of the underlying substrate terraces. Moreover, a transition from ballistic to one-dimensional diffusive transport can be obviously triggered by an increased roughness of the sidewall, e.g., by an enlarged depth of the mesa.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied Physics Letters, Vol. 106, No. 4, 043109, 30.01.2015.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Growth and characterization of sidewall graphene nanoribbons
AU - Baringhaus, Jens
AU - Aprojanz, Johannes
AU - Wiegand, Julia
AU - Laube, D.
AU - Halbauer, M.
AU - Hübner, Jens
AU - Oestreich, Michael
AU - Tegenkamp, Christoph
PY - 2015/1/30
Y1 - 2015/1/30
N2 - We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types of roughness, the step density of the substrate and the roughness of the sidewalls, were identified as being detrimental to the transport properties of these ribbons. By means of 4-point probe experiments, single channel ballistic transport was observed with a mean free path limited by the width of the underlying substrate terraces. Moreover, a transition from ballistic to one-dimensional diffusive transport can be obviously triggered by an increased roughness of the sidewall, e.g., by an enlarged depth of the mesa.
AB - We study the growth of epitaxial graphene nanoribbons on silicon carbide mesa sidewalls by means of scanning probe techniques, local transport, and Raman spectroscopy. The sidewall nanoribbons are demonstrated to consist of charge neutral monolayer graphene with a zig-zag type orientation. Two types of roughness, the step density of the substrate and the roughness of the sidewalls, were identified as being detrimental to the transport properties of these ribbons. By means of 4-point probe experiments, single channel ballistic transport was observed with a mean free path limited by the width of the underlying substrate terraces. Moreover, a transition from ballistic to one-dimensional diffusive transport can be obviously triggered by an increased roughness of the sidewall, e.g., by an enlarged depth of the mesa.
UR - http://www.scopus.com/inward/record.url?scp=84923899891&partnerID=8YFLogxK
U2 - 10.1063/1.4907041
DO - 10.1063/1.4907041
M3 - Article
AN - SCOPUS:84923899891
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 4
M1 - 043109
ER -