Details
| Original language | English |
|---|---|
| Pages (from-to) | 551-556 |
| Number of pages | 6 |
| Journal | Superlattices and microstructures |
| Volume | 40 |
| Issue number | 4-6 |
| Early online date | 17 Aug 2006 |
| Publication status | Published - Oct 2006 |
Abstract
We have investigated the growth and electrical properties of crystalline Gd2O3 grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure were formed. Further growth resulted in the formation of flat layers in a mixture of [111]-oriented cubic bixbyite and monoclinic structure. The fabricated capacitors with 14 nm Gd2O3 exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1 V and breakdown fields >4.3 MV/cm.
Keywords
- C-V, High-k dielectrics, I-V, MBE, Rare-earth metal oxide, XPS, XRD
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Superlattices and microstructures, Vol. 40, No. 4-6, 10.2006, p. 551-556.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application
AU - Fissel, A.
AU - Czemohorsky, M.
AU - Dargis, R.
AU - Osten, H. J.
PY - 2006/10
Y1 - 2006/10
N2 - We have investigated the growth and electrical properties of crystalline Gd2O3 grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure were formed. Further growth resulted in the formation of flat layers in a mixture of [111]-oriented cubic bixbyite and monoclinic structure. The fabricated capacitors with 14 nm Gd2O3 exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1 V and breakdown fields >4.3 MV/cm.
AB - We have investigated the growth and electrical properties of crystalline Gd2O3 grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure were formed. Further growth resulted in the formation of flat layers in a mixture of [111]-oriented cubic bixbyite and monoclinic structure. The fabricated capacitors with 14 nm Gd2O3 exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1 V and breakdown fields >4.3 MV/cm.
KW - C-V
KW - High-k dielectrics
KW - I-V
KW - MBE
KW - Rare-earth metal oxide
KW - XPS
KW - XRD
UR - http://www.scopus.com/inward/record.url?scp=38449118185&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2006.07.002
DO - 10.1016/j.spmi.2006.07.002
M3 - Article
AN - SCOPUS:33845205026
VL - 40
SP - 551
EP - 556
JO - Superlattices and microstructures
JF - Superlattices and microstructures
SN - 0749-6036
IS - 4-6
ER -