Details
| Original language | English |
|---|---|
| Article number | 121202 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 81 |
| Issue number | 12 |
| Publication status | Published - 31 Mar 2010 |
Abstract
We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in semiconductors. The optical nondemolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth-resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as suggested previously, but from spatial g -factor variations.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 12, 121202, 31.03.2010.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Gigahertz spin noise spectroscopy in n-doped bulk GaAs
AU - Müller, Georg M.
AU - Römer, Michael
AU - Hübner, Jens
AU - Oestreich, Michael
PY - 2010/3/31
Y1 - 2010/3/31
N2 - We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in semiconductors. The optical nondemolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth-resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as suggested previously, but from spatial g -factor variations.
AB - We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in semiconductors. The optical nondemolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth-resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as suggested previously, but from spatial g -factor variations.
UR - http://www.scopus.com/inward/record.url?scp=77955144873&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.81.121202
DO - 10.1103/PhysRevB.81.121202
M3 - Article
AN - SCOPUS:77955144873
VL - 81
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 12
M1 - 121202
ER -