Geometrical and electronic properties of ultra thin epitaxial metal nanowires on flat and vicinal Si surfaces

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Herbert Pfnür
  • Volkmar Zielasek
  • Christoph Tegenkamp
  • Thomas Block
  • Ziad Kallassy

Research Organisations

View graph of relations

Details

Original languageEnglish
Pages (from-to)861-876
Number of pages16
JournalMaterials Science- Poland
Volume23
Issue number4
Publication statusPublished - Dec 2005

Abstract

The study of metallic low-dimensional nanoscale systems requires the generation of ultra-small structures. We demonstrate the feasibility of the formation of metallic wires of arbitrary shape with a lateral width below 10 nm and a thickness from one to several monolayers using a combination of electron beam lithography in ultra-high vacuum and tunnelling microscopy. These methods can be easily combined with surfaces structured by self-organization. As an example, a system consisting of Pb on Si(557) is discussed. It exhibits quasi one-dimensional conduction properties already with one Pb monolayer, which undergoes a temperature-driven structural phase transition, switching the system between high and low conductance anisotropy.

Keywords

    Electron-beam lithography, Low-dimensional nanoscale system, Metal epitaxy, Nanowires, Silicon, Silver, Surface conductivity, Tunnelling microscopy

ASJC Scopus subject areas

Cite this

Geometrical and electronic properties of ultra thin epitaxial metal nanowires on flat and vicinal Si surfaces. / Pfnür, Herbert; Zielasek, Volkmar; Tegenkamp, Christoph et al.
In: Materials Science- Poland, Vol. 23, No. 4, 12.2005, p. 861-876.

Research output: Contribution to journalArticleResearchpeer review

Download
@article{765a4b2c4c414da7a85f8d9e543da172,
title = "Geometrical and electronic properties of ultra thin epitaxial metal nanowires on flat and vicinal Si surfaces",
abstract = "The study of metallic low-dimensional nanoscale systems requires the generation of ultra-small structures. We demonstrate the feasibility of the formation of metallic wires of arbitrary shape with a lateral width below 10 nm and a thickness from one to several monolayers using a combination of electron beam lithography in ultra-high vacuum and tunnelling microscopy. These methods can be easily combined with surfaces structured by self-organization. As an example, a system consisting of Pb on Si(557) is discussed. It exhibits quasi one-dimensional conduction properties already with one Pb monolayer, which undergoes a temperature-driven structural phase transition, switching the system between high and low conductance anisotropy.",
keywords = "Electron-beam lithography, Low-dimensional nanoscale system, Metal epitaxy, Nanowires, Silicon, Silver, Surface conductivity, Tunnelling microscopy",
author = "Herbert Pfn{\"u}r and Volkmar Zielasek and Christoph Tegenkamp and Thomas Block and Ziad Kallassy",
year = "2005",
month = dec,
language = "English",
volume = "23",
pages = "861--876",
journal = "Materials Science- Poland",
issn = "0137-1339",
publisher = "Walter de Gruyter GmbH",
number = "4",

}

Download

TY - JOUR

T1 - Geometrical and electronic properties of ultra thin epitaxial metal nanowires on flat and vicinal Si surfaces

AU - Pfnür, Herbert

AU - Zielasek, Volkmar

AU - Tegenkamp, Christoph

AU - Block, Thomas

AU - Kallassy, Ziad

PY - 2005/12

Y1 - 2005/12

N2 - The study of metallic low-dimensional nanoscale systems requires the generation of ultra-small structures. We demonstrate the feasibility of the formation of metallic wires of arbitrary shape with a lateral width below 10 nm and a thickness from one to several monolayers using a combination of electron beam lithography in ultra-high vacuum and tunnelling microscopy. These methods can be easily combined with surfaces structured by self-organization. As an example, a system consisting of Pb on Si(557) is discussed. It exhibits quasi one-dimensional conduction properties already with one Pb monolayer, which undergoes a temperature-driven structural phase transition, switching the system between high and low conductance anisotropy.

AB - The study of metallic low-dimensional nanoscale systems requires the generation of ultra-small structures. We demonstrate the feasibility of the formation of metallic wires of arbitrary shape with a lateral width below 10 nm and a thickness from one to several monolayers using a combination of electron beam lithography in ultra-high vacuum and tunnelling microscopy. These methods can be easily combined with surfaces structured by self-organization. As an example, a system consisting of Pb on Si(557) is discussed. It exhibits quasi one-dimensional conduction properties already with one Pb monolayer, which undergoes a temperature-driven structural phase transition, switching the system between high and low conductance anisotropy.

KW - Electron-beam lithography

KW - Low-dimensional nanoscale system

KW - Metal epitaxy

KW - Nanowires

KW - Silicon

KW - Silver

KW - Surface conductivity

KW - Tunnelling microscopy

UR - http://www.scopus.com/inward/record.url?scp=32044453588&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:32044453588

VL - 23

SP - 861

EP - 876

JO - Materials Science- Poland

JF - Materials Science- Poland

SN - 0137-1339

IS - 4

ER -

By the same author(s)