Details
| Original language | English |
|---|---|
| Title of host publication | 2014 IEEE Energy Conversion Congress and Exposition |
| Subtitle of host publication | ECCE |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 5716-5722 |
| Number of pages | 7 |
| ISBN (electronic) | 978-1-4799-5776-7 |
| Publication status | Published - 2014 |
Abstract
Depletion mode silicon carbide junction field effect transistors provide the most promising perspective considering their on-state and switching characteristics as well as their robustness in future high-temperature applications. A major obstacle for an application in voltage source converters arises from the depletion mode characteristics of these devices. Therefore, additional efforts for the development of a safe gate drive system and startup strategies are necessary to ensure a safe operation. This paper deals with the development and design of a gate driver for depletion mode silicon carbide junction field effect transistors with redundant power supply and extended safety functionality, like undervoltage and short circuit detection. Printed circuit board integrated transformers with optimized winding layout have been designed to ensure low common mode coupling capacitance to exploit the high switching speed of the devices. The proposed gate driver is composed of commercially available components and integrated circuits suitable for ambient temperatures of up to 125°C.
ASJC Scopus subject areas
- Energy(all)
- Fuel Technology
- Energy(all)
- Energy Engineering and Power Technology
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2014 IEEE Energy Conversion Congress and Exposition: ECCE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 5716-5722 6954185.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Gate Driver for Safe Operation of Depletion Mode SiC JFETs
AU - Weber, Simon
AU - Merkert, Arvid
AU - Mertens, Axel
PY - 2014
Y1 - 2014
N2 - Depletion mode silicon carbide junction field effect transistors provide the most promising perspective considering their on-state and switching characteristics as well as their robustness in future high-temperature applications. A major obstacle for an application in voltage source converters arises from the depletion mode characteristics of these devices. Therefore, additional efforts for the development of a safe gate drive system and startup strategies are necessary to ensure a safe operation. This paper deals with the development and design of a gate driver for depletion mode silicon carbide junction field effect transistors with redundant power supply and extended safety functionality, like undervoltage and short circuit detection. Printed circuit board integrated transformers with optimized winding layout have been designed to ensure low common mode coupling capacitance to exploit the high switching speed of the devices. The proposed gate driver is composed of commercially available components and integrated circuits suitable for ambient temperatures of up to 125°C.
AB - Depletion mode silicon carbide junction field effect transistors provide the most promising perspective considering their on-state and switching characteristics as well as their robustness in future high-temperature applications. A major obstacle for an application in voltage source converters arises from the depletion mode characteristics of these devices. Therefore, additional efforts for the development of a safe gate drive system and startup strategies are necessary to ensure a safe operation. This paper deals with the development and design of a gate driver for depletion mode silicon carbide junction field effect transistors with redundant power supply and extended safety functionality, like undervoltage and short circuit detection. Printed circuit board integrated transformers with optimized winding layout have been designed to ensure low common mode coupling capacitance to exploit the high switching speed of the devices. The proposed gate driver is composed of commercially available components and integrated circuits suitable for ambient temperatures of up to 125°C.
UR - http://www.scopus.com/inward/record.url?scp=84934301012&partnerID=8YFLogxK
U2 - 10.1109/ECCE.2014.6954185
DO - 10.1109/ECCE.2014.6954185
M3 - Conference contribution
AN - SCOPUS:84934301012
SP - 5716
EP - 5722
BT - 2014 IEEE Energy Conversion Congress and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
ER -