Details
| Original language | English |
|---|---|
| Title of host publication | 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 9789075815399 |
| ISBN (print) | 978-1-6654-8700-9 |
| Publication status | Published - 2022 |
| Event | 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe - Hanover, Germany Duration: 5 Sept 2022 → 9 Sept 2022 |
Abstract
This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.
Keywords
- Gallium Nitride (GaN), Magentic device, Silicon Carbide (SiC), Single phase system, Switching losses
ASJC Scopus subject areas
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2022.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage
AU - Brinker, Tobias
AU - Gräber, Hendrik
AU - Friebe, Jens
N1 - Funding Information: Parts of this work were funded by the German Federal Ministry for Economic Affairs and Climate Action under Grant No. 03EE1057A (Voyager-PV) on the basis of a decision by the German Bundestag and also by the Ministry of Science and Culture of Lower Saxony and the Volkswagen Foundation. The authors are responsible for the content of this publication.
PY - 2022
Y1 - 2022
N2 - This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.
AB - This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.
KW - Gallium Nitride (GaN)
KW - Magentic device
KW - Silicon Carbide (SiC)
KW - Single phase system
KW - Switching losses
UR - http://www.scopus.com/inward/record.url?scp=85141640689&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85141640689
SN - 978-1-6654-8700-9
BT - 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe
Y2 - 5 September 2022 through 9 September 2022
ER -