Details
| Original language | English |
|---|---|
| Pages (from-to) | 287-296 |
| Number of pages | 10 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 13 |
| Issue number | 4 |
| Publication status | Published - Jun 2005 |
| Externally published | Yes |
Abstract
Boron-doped crystalline silicon is the most relevant material in today's solar cell production. Following the trend towards higher efficiencies, silicon substrate materials with high carrier lifetimes are becoming more and more important. In silicon with sufficiently low metal impurity concentrations, the carrier lifetime is ultimately limited by a metastable boron-oxygen-related defect, which forms under minority-minoritycarrier-carrier injection. We have analysed 49 different Czochralski-grown silicon materials of numerous suppliers with various boron and oxygen concentrations. On the basis of our measured lifetime data, we have derived a universal empirical parameterisation predicting the stable carrier lifetime from the boron and oxygen content in the crystalline silicon material. For multicrystalline silicon it is shown that the predicted carrier lifetime can be regarded as a fundamental upper limit.
Keywords
- Boron-oxygen, Czochralski, Defects, Lifetime, Multicrystalline, Recombination, Silicon
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 13, No. 4, 06.2005, p. 287-296.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Fundamental boron-oxygen-related carrier lifetime limit in mono- And multicrystalline silicon
AU - Bothe, Karsten
AU - Sinton, Ron
AU - Schmidt, Jan
PY - 2005/6
Y1 - 2005/6
N2 - Boron-doped crystalline silicon is the most relevant material in today's solar cell production. Following the trend towards higher efficiencies, silicon substrate materials with high carrier lifetimes are becoming more and more important. In silicon with sufficiently low metal impurity concentrations, the carrier lifetime is ultimately limited by a metastable boron-oxygen-related defect, which forms under minority-minoritycarrier-carrier injection. We have analysed 49 different Czochralski-grown silicon materials of numerous suppliers with various boron and oxygen concentrations. On the basis of our measured lifetime data, we have derived a universal empirical parameterisation predicting the stable carrier lifetime from the boron and oxygen content in the crystalline silicon material. For multicrystalline silicon it is shown that the predicted carrier lifetime can be regarded as a fundamental upper limit.
AB - Boron-doped crystalline silicon is the most relevant material in today's solar cell production. Following the trend towards higher efficiencies, silicon substrate materials with high carrier lifetimes are becoming more and more important. In silicon with sufficiently low metal impurity concentrations, the carrier lifetime is ultimately limited by a metastable boron-oxygen-related defect, which forms under minority-minoritycarrier-carrier injection. We have analysed 49 different Czochralski-grown silicon materials of numerous suppliers with various boron and oxygen concentrations. On the basis of our measured lifetime data, we have derived a universal empirical parameterisation predicting the stable carrier lifetime from the boron and oxygen content in the crystalline silicon material. For multicrystalline silicon it is shown that the predicted carrier lifetime can be regarded as a fundamental upper limit.
KW - Boron-oxygen
KW - Czochralski
KW - Defects
KW - Lifetime
KW - Multicrystalline
KW - Recombination
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=20444401538&partnerID=8YFLogxK
U2 - 10.1002/pip.586
DO - 10.1002/pip.586
M3 - Article
AN - SCOPUS:20444401538
VL - 13
SP - 287
EP - 296
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 4
ER -