Details
| Original language | English |
|---|---|
| Article number | 8533392 |
| Pages (from-to) | 49-54 |
| Number of pages | 6 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 9 |
| Issue number | 1 |
| Early online date | 13 Nov 2018 |
| Publication status | Published - Jan 2019 |
Abstract
We present a novel cell concept that combines the tandem cell approach with the passivated emitter and rear cells (PERC) mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n+-Type polysilicon on oxide (POLO) contacts and a p+ poly-Si/n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process sequence where the POCl3 diffusion and SiNx deposition are replaced by the POLO junction formation processes. The implied open-circuit voltage iVoc that is measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum to simulated top cell absorption). On sister cells with planar front side, the respective iVoc values are 718 mV (696 mV). In order to understand the device physics of our ultra-Abrupt p+ poly-Si/n+ poly-Si tunneling junction, we determined the carrier lifetime in the poly-Si by time-resolved photoluminescence. The extracted lifetimes of 42-54 ps enter as input parameter for numerical Sentaurus Device simulations. These simulations reveal the importance of band-To-band and trap-Assisted tunneling for a low tunneling junction resistivity of 2.95 m·cm2. Experimentally, an upper limit for the combined junction resistance of the p+ poly-Si/n+ poly-Si/SiOx stack of 100 m·cm2 is determined.
Keywords
- p-Type silicon cell, Passivated emitter and rear cells (PERC), passivating contacts, photoluminescence, photovoltaic cells, polycrystalline silicon, silicon-based tandem solar cells, solar energy, tunneling junction
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE Journal of Photovoltaics, Vol. 9, No. 1, 8533392, 01.2019, p. 49-54.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - From PERC to Tandem
T2 - POLO-and p+/n+ Poly-Si Tunneling Junction as Interface between Bottom and Top Cell
AU - Peibst, Robby
AU - Rienäcker, Michael
AU - Min, Byungsul
AU - Klamt, Christina
AU - Niepelt, Raphael
AU - Wietler, Tobias F.
AU - Dullweber, Thorsten
AU - Sauter, Eduard
AU - Hubner, Jens
AU - Oestreich, Michael
AU - Brendel, Rolf
N1 - Funding information: This work was supported in part by the German Federal Ministry for Economic Affairs and Energy, under Grant 324040 (Project EASi), in part by the Federal Sate of Lower Saxony, and in part by the European Union’s Horizon 2020 Programme for Research, Technological Development and Demonstration under Grant 727529 (Project DISC).
PY - 2019/1
Y1 - 2019/1
N2 - We present a novel cell concept that combines the tandem cell approach with the passivated emitter and rear cells (PERC) mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n+-Type polysilicon on oxide (POLO) contacts and a p+ poly-Si/n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process sequence where the POCl3 diffusion and SiNx deposition are replaced by the POLO junction formation processes. The implied open-circuit voltage iVoc that is measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum to simulated top cell absorption). On sister cells with planar front side, the respective iVoc values are 718 mV (696 mV). In order to understand the device physics of our ultra-Abrupt p+ poly-Si/n+ poly-Si tunneling junction, we determined the carrier lifetime in the poly-Si by time-resolved photoluminescence. The extracted lifetimes of 42-54 ps enter as input parameter for numerical Sentaurus Device simulations. These simulations reveal the importance of band-To-band and trap-Assisted tunneling for a low tunneling junction resistivity of 2.95 m·cm2. Experimentally, an upper limit for the combined junction resistance of the p+ poly-Si/n+ poly-Si/SiOx stack of 100 m·cm2 is determined.
AB - We present a novel cell concept that combines the tandem cell approach with the passivated emitter and rear cells (PERC) mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n+-Type polysilicon on oxide (POLO) contacts and a p+ poly-Si/n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process sequence where the POCl3 diffusion and SiNx deposition are replaced by the POLO junction formation processes. The implied open-circuit voltage iVoc that is measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum to simulated top cell absorption). On sister cells with planar front side, the respective iVoc values are 718 mV (696 mV). In order to understand the device physics of our ultra-Abrupt p+ poly-Si/n+ poly-Si tunneling junction, we determined the carrier lifetime in the poly-Si by time-resolved photoluminescence. The extracted lifetimes of 42-54 ps enter as input parameter for numerical Sentaurus Device simulations. These simulations reveal the importance of band-To-band and trap-Assisted tunneling for a low tunneling junction resistivity of 2.95 m·cm2. Experimentally, an upper limit for the combined junction resistance of the p+ poly-Si/n+ poly-Si/SiOx stack of 100 m·cm2 is determined.
KW - p-Type silicon cell
KW - Passivated emitter and rear cells (PERC)
KW - passivating contacts
KW - photoluminescence
KW - photovoltaic cells
KW - polycrystalline silicon
KW - silicon-based tandem solar cells
KW - solar energy
KW - tunneling junction
UR - http://www.scopus.com/inward/record.url?scp=85056574437&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2018.2876999
DO - 10.1109/jphotov.2018.2876999
M3 - Article
AN - SCOPUS:85056574437
VL - 9
SP - 49
EP - 54
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 1
M1 - 8533392
ER -