Details
| Original language | English |
|---|---|
| Pages (from-to) | 1516-1526 |
| Number of pages | 11 |
| Journal | Journal of Computational Electronics |
| Volume | 19 |
| Issue number | 4 |
| Early online date | 10 Aug 2020 |
| Publication status | Published - Dec 2020 |
Abstract
A new theoretical model for the dielectrophoretic (DEP) fabrication of single-walled carbon nanotubes (SWCNTs) is presented. A different frequency interval for the alignment of wide-energy-gap semiconductor SWCNTs is obtained, exhibiting a considerable difference from the prevalent model. Two specific models are study, namely the spherical model and the ellipsoid model, to estimate the frequency interval. Then, the DEP process is performed and the obtained frequencies (from the spherical and ellipsoid models) are used to align the SWCNTs. These empirical results confirm the theoretical predictions, representing a crucial step towards the realization of carbon nanotube field-effect transistors (CNT-FETs) via the DEP process based on the ellipsoid model.
Keywords
- Dielectrophoresis, Ellipsoid model, Single-walled carbon nanotube, Spherical model
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Mathematics(all)
- Modelling and Simulation
- Engineering(all)
- Electrical and Electronic Engineering
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In: Journal of Computational Electronics, Vol. 19, No. 4, 12.2020, p. 1516-1526.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors
AU - Sadabad, Yousef Adeli
AU - Khodadadian, Amirreza
AU - Istadeh, Kiarash Hosseini
AU - Hedayati, Marjan
AU - Kalantarinejad, Reza
AU - Heitzinger, Clemens
N1 - Funding Information: Open access funding provided by Austrian Science Fund (FWF). A.K. and C.H. acknowledge financial support given by the FWF (Austrian Science Fund) START Project No. Y660 (PDE Models for Nanotechnology).
PY - 2020/12
Y1 - 2020/12
N2 - A new theoretical model for the dielectrophoretic (DEP) fabrication of single-walled carbon nanotubes (SWCNTs) is presented. A different frequency interval for the alignment of wide-energy-gap semiconductor SWCNTs is obtained, exhibiting a considerable difference from the prevalent model. Two specific models are study, namely the spherical model and the ellipsoid model, to estimate the frequency interval. Then, the DEP process is performed and the obtained frequencies (from the spherical and ellipsoid models) are used to align the SWCNTs. These empirical results confirm the theoretical predictions, representing a crucial step towards the realization of carbon nanotube field-effect transistors (CNT-FETs) via the DEP process based on the ellipsoid model.
AB - A new theoretical model for the dielectrophoretic (DEP) fabrication of single-walled carbon nanotubes (SWCNTs) is presented. A different frequency interval for the alignment of wide-energy-gap semiconductor SWCNTs is obtained, exhibiting a considerable difference from the prevalent model. Two specific models are study, namely the spherical model and the ellipsoid model, to estimate the frequency interval. Then, the DEP process is performed and the obtained frequencies (from the spherical and ellipsoid models) are used to align the SWCNTs. These empirical results confirm the theoretical predictions, representing a crucial step towards the realization of carbon nanotube field-effect transistors (CNT-FETs) via the DEP process based on the ellipsoid model.
KW - Dielectrophoresis
KW - Ellipsoid model
KW - Single-walled carbon nanotube
KW - Spherical model
UR - http://www.scopus.com/inward/record.url?scp=85089299192&partnerID=8YFLogxK
U2 - 10.1007/s10825-020-01562-x
DO - 10.1007/s10825-020-01562-x
M3 - Article
AN - SCOPUS:85089299192
VL - 19
SP - 1516
EP - 1526
JO - Journal of Computational Electronics
JF - Journal of Computational Electronics
SN - 1569-8025
IS - 4
ER -