Details
| Original language | English |
|---|---|
| Pages (from-to) | 392-397 |
| Number of pages | 6 |
| Journal | Journal of crystal growth |
| Volume | 290 |
| Issue number | 2 |
| Early online date | 17 Apr 2006 |
| Publication status | Published - 1 May 2006 |
Abstract
We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)( sqrt(3) × sqrt(3))R30°-B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)( sqrt(3) × sqrt(3))R30°-surface covered by at least frac(1, 3) ML boron results in the formation of 180° rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes.
Keywords
- A1. Twinning, A3. Molecular beam epitaxy, A3. Superlattice, B2. Silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 290, No. 2, 01.05.2006, p. 392-397.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Formation of twinning-superlattice regions by artificial stacking of Si layers
AU - Fissel, A.
AU - Bugiel, E.
AU - Wang, C. R.
AU - Osten, H. J.
PY - 2006/5/1
Y1 - 2006/5/1
N2 - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)( sqrt(3) × sqrt(3))R30°-B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)( sqrt(3) × sqrt(3))R30°-surface covered by at least frac(1, 3) ML boron results in the formation of 180° rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes.
AB - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)( sqrt(3) × sqrt(3))R30°-B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)( sqrt(3) × sqrt(3))R30°-surface covered by at least frac(1, 3) ML boron results in the formation of 180° rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes.
KW - A1. Twinning
KW - A3. Molecular beam epitaxy
KW - A3. Superlattice
KW - B2. Silicon
UR - http://www.scopus.com/inward/record.url?scp=33646363601&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.02.009
DO - 10.1016/j.jcrysgro.2006.02.009
M3 - Article
AN - SCOPUS:33646363601
VL - 290
SP - 392
EP - 397
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 2
ER -