Details
| Original language | English |
|---|---|
| Pages (from-to) | 138-141 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 134 |
| Issue number | 2-3 SPEC. ISS. |
| Early online date | 21 Aug 2006 |
| Publication status | Published - 15 Oct 2006 |
Abstract
We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by multi-step molecular beam epitaxy on Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-B surfaces in which boron acts as a subsurfactant. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twins along the [1 1 1] direction separated by a few nanometers. The multi-step procedure consists of repeating several growth, boron deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-surface covered by at least 1/3 ML subsurface boron results in the formation of 180° rotation twins. The presented technology should be suitable to prepare Si polytypes.
Keywords
- Molecular beam epitaxy, Silicon, Superlattice, Twinning
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 134, No. 2-3 SPEC. ISS., 15.10.2006, p. 138-141.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Formation of Si twinning-superlattice
T2 - First step towards Si polytype growth
AU - Fissel, A.
AU - Bugiel, E.
AU - Wang, C. R.
AU - Osten, H. J.
N1 - Funding Information: The authors acknowledge the financial support of the Deutsche Forschungsgemeinschaft (DFG Project FI 726/3-1). Furthermore, the authors also like to thank Michael Seibt from the university of Göttingen for using the TEM equipment.
PY - 2006/10/15
Y1 - 2006/10/15
N2 - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by multi-step molecular beam epitaxy on Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-B surfaces in which boron acts as a subsurfactant. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twins along the [1 1 1] direction separated by a few nanometers. The multi-step procedure consists of repeating several growth, boron deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-surface covered by at least 1/3 ML subsurface boron results in the formation of 180° rotation twins. The presented technology should be suitable to prepare Si polytypes.
AB - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by multi-step molecular beam epitaxy on Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-B surfaces in which boron acts as a subsurfactant. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twins along the [1 1 1] direction separated by a few nanometers. The multi-step procedure consists of repeating several growth, boron deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-surface covered by at least 1/3 ML subsurface boron results in the formation of 180° rotation twins. The presented technology should be suitable to prepare Si polytypes.
KW - Molecular beam epitaxy
KW - Silicon
KW - Superlattice
KW - Twinning
UR - http://www.scopus.com/inward/record.url?scp=33750351275&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2006.06.046
DO - 10.1016/j.mseb.2006.06.046
M3 - Article
AN - SCOPUS:33750351275
VL - 134
SP - 138
EP - 141
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 2-3 SPEC. ISS.
ER -