Details
| Original language | English |
|---|---|
| Title of host publication | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
| Pages | 1086-1089 |
| Number of pages | 4 |
| ISBN (electronic) | 9781424429509 |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 Conference number: 34 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
Monocrystalline, mesoporous GaAs double layers with controlled porosities are formed by means of electrochemical etching on p-type GaAs substrates using highly concentrated HF-based electrolytes. Variations in the electrolyte concentration and etching current density lead to changes in the porosity, morphology, thickness and etching rate of the porous layers. The porous layer is composed of micro and mesopores with a diameter in the range of 1 nm to 38 nm and a mean value of less than 10nm. The etching rate of the porous layer lies in a range of 1.7 nm/sec to 1725 nm/sec. Hundred nm sized 〈111〉 oriented pyramids form at the interface between porous layer and substrate if etching current densities below 7.5 mA/cm2 are applied. Mesoporous layers with thicknesses of up to 7 μm form reproducibly. Porous layers thicker than 7 μm automatically lift-off from the substrate. We demonstrate the spatially homogenous formation of mesopores on GaAs wafers with 4″ in diameter. The etching rates and thicknesses values achieved indicate that etching of GaAs mesopores may be applicable to the industrial production of space solar cells.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1086-1089 5411208 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Formation of mesoporous gallium arsenide for lift-off processes by electrochemical etching
AU - Rojas, Enrique Garralaga
AU - Hampe, Carsten
AU - Plagwitz, Heiko
AU - Brendel, Rolf
N1 - Conference code: 34
PY - 2009
Y1 - 2009
N2 - Monocrystalline, mesoporous GaAs double layers with controlled porosities are formed by means of electrochemical etching on p-type GaAs substrates using highly concentrated HF-based electrolytes. Variations in the electrolyte concentration and etching current density lead to changes in the porosity, morphology, thickness and etching rate of the porous layers. The porous layer is composed of micro and mesopores with a diameter in the range of 1 nm to 38 nm and a mean value of less than 10nm. The etching rate of the porous layer lies in a range of 1.7 nm/sec to 1725 nm/sec. Hundred nm sized 〈111〉 oriented pyramids form at the interface between porous layer and substrate if etching current densities below 7.5 mA/cm2 are applied. Mesoporous layers with thicknesses of up to 7 μm form reproducibly. Porous layers thicker than 7 μm automatically lift-off from the substrate. We demonstrate the spatially homogenous formation of mesopores on GaAs wafers with 4″ in diameter. The etching rates and thicknesses values achieved indicate that etching of GaAs mesopores may be applicable to the industrial production of space solar cells.
AB - Monocrystalline, mesoporous GaAs double layers with controlled porosities are formed by means of electrochemical etching on p-type GaAs substrates using highly concentrated HF-based electrolytes. Variations in the electrolyte concentration and etching current density lead to changes in the porosity, morphology, thickness and etching rate of the porous layers. The porous layer is composed of micro and mesopores with a diameter in the range of 1 nm to 38 nm and a mean value of less than 10nm. The etching rate of the porous layer lies in a range of 1.7 nm/sec to 1725 nm/sec. Hundred nm sized 〈111〉 oriented pyramids form at the interface between porous layer and substrate if etching current densities below 7.5 mA/cm2 are applied. Mesoporous layers with thicknesses of up to 7 μm form reproducibly. Porous layers thicker than 7 μm automatically lift-off from the substrate. We demonstrate the spatially homogenous formation of mesopores on GaAs wafers with 4″ in diameter. The etching rates and thicknesses values achieved indicate that etching of GaAs mesopores may be applicable to the industrial production of space solar cells.
UR - http://www.scopus.com/inward/record.url?scp=77951575489&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2009.5411208
DO - 10.1109/PVSC.2009.5411208
M3 - Conference contribution
AN - SCOPUS:77951575489
SN - 978-1-4244-2949-3
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1086
EP - 1089
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Y2 - 7 June 2009 through 12 June 2009
ER -