Details
| Original language | English |
|---|---|
| Pages (from-to) | 521-526 |
| Number of pages | 6 |
| Journal | Energy Procedia |
| Volume | 8 |
| Publication status | Published - 2011 |
Abstract
Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition.
Keywords
- Alloying, Aluminum doped silicon, Crystalline silicon solar cell, In-line evaporation, Local contacts
ASJC Scopus subject areas
- Energy(all)
- General Energy
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In: Energy Procedia, Vol. 8, 2011, p. 521-526.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation
AU - Mader, Christoph
AU - Bock, Robert
AU - Müller, Jens
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: This work is supported by the State of Lower Saxony.
PY - 2011
Y1 - 2011
N2 - Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition.
AB - Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition.
KW - Alloying
KW - Aluminum doped silicon
KW - Crystalline silicon solar cell
KW - In-line evaporation
KW - Local contacts
UR - http://www.scopus.com/inward/record.url?scp=80052083487&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.176
DO - 10.1016/j.egypro.2011.06.176
M3 - Article
AN - SCOPUS:80052083487
VL - 8
SP - 521
EP - 526
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -