Details
| Original language | English |
|---|---|
| Pages (from-to) | 1720-1722 |
| Number of pages | 3 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 95 |
| Issue number | 7 |
| Early online date | 4 Mar 2011 |
| Publication status | Published - Jul 2011 |
| Externally published | Yes |
Abstract
Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 °C during deposition an Al-doped p region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695±65 fA/cm2 for the fully metalized Al-p regions, which corresponds to an implied solar cell open-circuit voltage of 635±2 mV.
Keywords
- Alloying, Aluminum-doped silicon, Crystalline silicon solar cell, In-line evaporation
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 95, No. 7, 07.2011, p. 1720-1722.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Formation of highly aluminum-doped p-type silicon regions by in-line high-rate evaporation
AU - Mader, Christoph
AU - Bock, Robert
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: This work is supported by the State of Lower Saxony.
PY - 2011/7
Y1 - 2011/7
N2 - Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 °C during deposition an Al-doped p region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695±65 fA/cm2 for the fully metalized Al-p regions, which corresponds to an implied solar cell open-circuit voltage of 635±2 mV.
AB - Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 °C during deposition an Al-doped p region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695±65 fA/cm2 for the fully metalized Al-p regions, which corresponds to an implied solar cell open-circuit voltage of 635±2 mV.
KW - Alloying
KW - Aluminum-doped silicon
KW - Crystalline silicon solar cell
KW - In-line evaporation
UR - http://www.scopus.com/inward/record.url?scp=79955468972&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2011.01.039
DO - 10.1016/j.solmat.2011.01.039
M3 - Article
AN - SCOPUS:79955468972
VL - 95
SP - 1720
EP - 1722
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 7
ER -