Details
| Original language | English |
|---|---|
| Pages (from-to) | 1028-1031 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 9 |
| Issue number | 3-4 |
| Publication status | Published - 15 Feb 2012 |
| Externally published | Yes |
Abstract
We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular beam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive ion etching process. Atomic force microscopy and scanning electron microscopy show that the selective-area-grown cubic GaN nucleates in two structurally different domains, which most probably originate from the substrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to two different surface morphologies. The dominant phase within these domains was measured by electron backscatter diffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy.
Keywords
- Defects, Molecular beam epitaxy, Nanostructures, Nitrides
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 3-4, 15.02.2012, p. 1028-1031.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)
AU - Kemper, R. M.
AU - Häberlen, M.
AU - Schupp, T.
AU - Weinl, M.
AU - Bürger, M.
AU - Ruth, M.
AU - Meier, C.
AU - Niendorf, T.
AU - Maier, H. J.
AU - Lischka, K.
AU - As, D. J.
AU - Lindner, J. K.N.
PY - 2012/2/15
Y1 - 2012/2/15
N2 - We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular beam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive ion etching process. Atomic force microscopy and scanning electron microscopy show that the selective-area-grown cubic GaN nucleates in two structurally different domains, which most probably originate from the substrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to two different surface morphologies. The dominant phase within these domains was measured by electron backscatter diffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy.
AB - We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular beam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive ion etching process. Atomic force microscopy and scanning electron microscopy show that the selective-area-grown cubic GaN nucleates in two structurally different domains, which most probably originate from the substrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to two different surface morphologies. The dominant phase within these domains was measured by electron backscatter diffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy.
KW - Defects
KW - Molecular beam epitaxy
KW - Nanostructures
KW - Nitrides
UR - http://www.scopus.com/inward/record.url?scp=84858834407&partnerID=8YFLogxK
U2 - 10.1002/pssc.201100174
DO - 10.1002/pssc.201100174
M3 - Article
AN - SCOPUS:84858834407
VL - 9
SP - 1028
EP - 1031
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 3-4
ER -