Details
| Original language | English |
|---|---|
| Pages (from-to) | 1611-1616 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 44 |
| Publication status | Published - 30 Dec 2010 |
| Externally published | Yes |
Abstract
SiNx:H films of different compositions grown on glass and silicon substrates using plasma-chemical vapor deposition at a temperature of 380°C have been subjected to pulsed laser annealings. The treatments are performed using titanium-sapphire laser radiation with a wavelength of 800 nm and a pulse duration of 30 fs. Structural changes in the films are studied using Raman spectroscopy. Amorphous silicon nanoclusters are detected in as-grown films with molar fractions of excess silicon of ~1/5 and larger. Conditions required for pulsed crystallization of nanoclusters were determined. According to the Raman data, no silicon clusters were detected in as-grown films with a small amount of excess silicon (x > 1.25). Pulsed treatments resulted in the formation of silicon nanoclusters 1-2 nm in size in these films.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Semiconductors, Vol. 44, 30.12.2010, p. 1611-1616.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Formation and Crystallization of Silicon Nanoclusters in SiNx:H Films Using Femtosecond Pulsed Laser Annealings
AU - Korchagina, T. T.
AU - Volodin, V. A.
AU - Chichkov, B. N.
N1 - Funding information: This study was supported by the Novosibirsk City Hall (Grant for Young Scientists no. 19 09), the Par ticipants of Youth Scientific Innovation Competition foundation, the Russian Foundation for Basic Research, and the Deutscher Akademischer Austaus chdienst (DAAD).
PY - 2010/12/30
Y1 - 2010/12/30
N2 - SiNx:H films of different compositions grown on glass and silicon substrates using plasma-chemical vapor deposition at a temperature of 380°C have been subjected to pulsed laser annealings. The treatments are performed using titanium-sapphire laser radiation with a wavelength of 800 nm and a pulse duration of 30 fs. Structural changes in the films are studied using Raman spectroscopy. Amorphous silicon nanoclusters are detected in as-grown films with molar fractions of excess silicon of ~1/5 and larger. Conditions required for pulsed crystallization of nanoclusters were determined. According to the Raman data, no silicon clusters were detected in as-grown films with a small amount of excess silicon (x > 1.25). Pulsed treatments resulted in the formation of silicon nanoclusters 1-2 nm in size in these films.
AB - SiNx:H films of different compositions grown on glass and silicon substrates using plasma-chemical vapor deposition at a temperature of 380°C have been subjected to pulsed laser annealings. The treatments are performed using titanium-sapphire laser radiation with a wavelength of 800 nm and a pulse duration of 30 fs. Structural changes in the films are studied using Raman spectroscopy. Amorphous silicon nanoclusters are detected in as-grown films with molar fractions of excess silicon of ~1/5 and larger. Conditions required for pulsed crystallization of nanoclusters were determined. According to the Raman data, no silicon clusters were detected in as-grown films with a small amount of excess silicon (x > 1.25). Pulsed treatments resulted in the formation of silicon nanoclusters 1-2 nm in size in these films.
UR - http://www.scopus.com/inward/record.url?scp=78650651835&partnerID=8YFLogxK
U2 - 10.1134/S1063782610120146
DO - 10.1134/S1063782610120146
M3 - Article
AN - SCOPUS:78650651835
VL - 44
SP - 1611
EP - 1616
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
ER -