Details
| Original language | English |
|---|---|
| Pages (from-to) | 503-516 |
| Number of pages | 14 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 28 |
| Issue number | 6 |
| Publication status | Published - 20 May 2020 |
Abstract
We present a systematic study on the benefit of the implementation of poly-Si on oxide (POLO) or related junctions into p-type industrial Si solar cells as compared with the benchmark of Passivated Emitter and Rear Cell (PERC). We assess three aspects: (a) the simulated efficiency potential of representative structures with POLO junctions for none (=PERC+), one, and for two polarities; (b) possible lean process flows for their fabrication; and (c) experimental results on major building blocks. Synergistic efficiency gain analysis reveals that the exclusive suppression of the contact recombination for one polarity by POLO only yields moderate efficiency improvements between 0.23%abs and 0.41%abs as compared with PERC+ because of the remaining recombination paths. This problem is solved in a structure that includes POLO junctions for both polarities (POLO2), for whose realization we propose a lean process flow, and for which we experimentally demonstrate the most important building blocks. However, two experimental challenges—alignment tolerances and screen-print metallization of p+ poly-Si—are unsolved so far and reduced the efficiency of the “real” POLO2 cell as compared with an idealized scenario. As an intermediate step, we therefore work on a POLO IBC cell with POLO junctions for one polarity. It avoids the abovementioned challenges of the POLO2 structure, can be realized within a lean process flow, and has an efficiency benefit of 1.59%abs as compared with PERC—because not only contact recombination is suppressed but also the entire phosphorus emitter is replaced by an n+ POLO junction.
Keywords
- efficiency potential, passivating contacts, POLO, poly-Si, solar cell development
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 28, No. 6, 20.05.2020, p. 503-516.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - For none, one, or two polarities
T2 - How do POLO junctions fit best into industrial Si solar cells?
AU - Peibst, Robby
AU - Kruse, Christian
AU - Schäfer, Sören
AU - Mertens, Verena
AU - Bordihn, Stefan
AU - Dullweber, Thorsten
AU - Haase, Felix
AU - Hollemann, Christina
AU - Lim, Bianca
AU - Min, Byungsul
AU - Niepelt, Raphael
AU - Schulte-Huxel, Henning
AU - Brendel, Rolf
N1 - Funding information: We would like to thank Agnes Merkle for her contributions to the evaluation of screen?print metallization of p+ poly?Si and Audie Yeo and Boris Veith?Wolf for their contributions to the improvement of the AlO/SiN. We furthermore would like to thank Luise aus der Fünten for her help with TLM and PC?PLI measurements and L Menze for the optimization of in situ boron?doped and LPCVD?deposited polycrystalline Si. We would like to thank Larysa Mettner, Anja Mercker, Tobias Neubert, David Sylla, Ulrike Sonntag, Uwe Höhne, and Guido Glowatzki for sample processing. This work is funded by the German Federal Ministry for Economic Affairs and Energy under grant FKZ 0324274B (Genesis). 2 3 x We would like to thank Agnes Merkle for her contributions to the evaluation of screen-print metallization of p+ poly-Si and Audie Yeo and Boris Veith-Wolf for their contributions to the improvement of the Al2O3/SiNx. We furthermore would like to thank Luise aus der F?nten for her help with TLM and PC-PLI measurements and L Menze for the optimization of in situ boron-doped and LPCVD-deposited polycrystalline Si. We would like to thank Larysa Mettner, Anja Mercker, Tobias Neubert, David Sylla, Ulrike Sonntag, Uwe H?hne, and Guido Glowatzki for sample processing. This work is funded by the German Federal Ministry for Economic Affairs and Energy under grant FKZ 0324274B (Genesis).
PY - 2020/5/20
Y1 - 2020/5/20
N2 - We present a systematic study on the benefit of the implementation of poly-Si on oxide (POLO) or related junctions into p-type industrial Si solar cells as compared with the benchmark of Passivated Emitter and Rear Cell (PERC). We assess three aspects: (a) the simulated efficiency potential of representative structures with POLO junctions for none (=PERC+), one, and for two polarities; (b) possible lean process flows for their fabrication; and (c) experimental results on major building blocks. Synergistic efficiency gain analysis reveals that the exclusive suppression of the contact recombination for one polarity by POLO only yields moderate efficiency improvements between 0.23%abs and 0.41%abs as compared with PERC+ because of the remaining recombination paths. This problem is solved in a structure that includes POLO junctions for both polarities (POLO2), for whose realization we propose a lean process flow, and for which we experimentally demonstrate the most important building blocks. However, two experimental challenges—alignment tolerances and screen-print metallization of p+ poly-Si—are unsolved so far and reduced the efficiency of the “real” POLO2 cell as compared with an idealized scenario. As an intermediate step, we therefore work on a POLO IBC cell with POLO junctions for one polarity. It avoids the abovementioned challenges of the POLO2 structure, can be realized within a lean process flow, and has an efficiency benefit of 1.59%abs as compared with PERC—because not only contact recombination is suppressed but also the entire phosphorus emitter is replaced by an n+ POLO junction.
AB - We present a systematic study on the benefit of the implementation of poly-Si on oxide (POLO) or related junctions into p-type industrial Si solar cells as compared with the benchmark of Passivated Emitter and Rear Cell (PERC). We assess three aspects: (a) the simulated efficiency potential of representative structures with POLO junctions for none (=PERC+), one, and for two polarities; (b) possible lean process flows for their fabrication; and (c) experimental results on major building blocks. Synergistic efficiency gain analysis reveals that the exclusive suppression of the contact recombination for one polarity by POLO only yields moderate efficiency improvements between 0.23%abs and 0.41%abs as compared with PERC+ because of the remaining recombination paths. This problem is solved in a structure that includes POLO junctions for both polarities (POLO2), for whose realization we propose a lean process flow, and for which we experimentally demonstrate the most important building blocks. However, two experimental challenges—alignment tolerances and screen-print metallization of p+ poly-Si—are unsolved so far and reduced the efficiency of the “real” POLO2 cell as compared with an idealized scenario. As an intermediate step, we therefore work on a POLO IBC cell with POLO junctions for one polarity. It avoids the abovementioned challenges of the POLO2 structure, can be realized within a lean process flow, and has an efficiency benefit of 1.59%abs as compared with PERC—because not only contact recombination is suppressed but also the entire phosphorus emitter is replaced by an n+ POLO junction.
KW - efficiency potential
KW - passivating contacts
KW - POLO
KW - poly-Si
KW - solar cell development
UR - http://www.scopus.com/inward/record.url?scp=85074818856&partnerID=8YFLogxK
U2 - 10.1002/pip.3201
DO - 10.1002/pip.3201
M3 - Article
AN - SCOPUS:85074818856
VL - 28
SP - 503
EP - 516
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 6
ER -