Details
| Original language | English |
|---|---|
| Pages (from-to) | 180-185 |
| Number of pages | 6 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 96 |
| Early online date | 13 Oct 2011 |
| Publication status | Published - Jan 2012 |
Abstract
In the photovoltaic industry contacts to crystalline silicon are typically formed by firing of screen-printed metallization pastes. However, the stability of surface passivation layers during high temperature contact formation is a major challenge. Here, we investigate the thermal stability of the surface passivation by amorphous silicon nitride double layers (SiNy/SiN x). The SiNy passivation layer is silicon rich with refractive index larger than 3. Whereas the SiNx capping layer has a refractive index of 2.05. Compared to pure hydrogenated amorphous silicon, the nitrogen in the SiNy passivation layer improves the firing stability. We achieve an effective surface recombination velocity after a conventional co-firing process of (5.2±2) cm/s on p-type (1.5 Ωcm) FZ-silicon wafers at an injection density of 1015 cm-3. An analysis of the improved firing stability is presented based on FTIR and hydrogen effusion measurements. The incorporation of an SiNy/SiNx stack into the passivated rear of Cz silicon screen-printed solar cells results in an energy conversion efficiency of 18.3% compared to reference solar cells with conventional aluminum back surface field showing 17.9% efficiency. The short circuit current density increases by up to 0.8 mA/cm2 compared to conventional solar cells due to the improved optical reflectance and rear side surface passivation.
Keywords
- PERC solar cell, Screen-printing, Silicon nitride, Surface passivation
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 96, 01.2012, p. 180-185.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Firing stability of SiNy/SiNx stacks for the surface passivation of crystalline silicon solar cells
AU - Gatz, S.
AU - Dullweber, T.
AU - Mertens, V.
AU - Einsele, F.
AU - Brendel, R.
PY - 2012/1
Y1 - 2012/1
N2 - In the photovoltaic industry contacts to crystalline silicon are typically formed by firing of screen-printed metallization pastes. However, the stability of surface passivation layers during high temperature contact formation is a major challenge. Here, we investigate the thermal stability of the surface passivation by amorphous silicon nitride double layers (SiNy/SiN x). The SiNy passivation layer is silicon rich with refractive index larger than 3. Whereas the SiNx capping layer has a refractive index of 2.05. Compared to pure hydrogenated amorphous silicon, the nitrogen in the SiNy passivation layer improves the firing stability. We achieve an effective surface recombination velocity after a conventional co-firing process of (5.2±2) cm/s on p-type (1.5 Ωcm) FZ-silicon wafers at an injection density of 1015 cm-3. An analysis of the improved firing stability is presented based on FTIR and hydrogen effusion measurements. The incorporation of an SiNy/SiNx stack into the passivated rear of Cz silicon screen-printed solar cells results in an energy conversion efficiency of 18.3% compared to reference solar cells with conventional aluminum back surface field showing 17.9% efficiency. The short circuit current density increases by up to 0.8 mA/cm2 compared to conventional solar cells due to the improved optical reflectance and rear side surface passivation.
AB - In the photovoltaic industry contacts to crystalline silicon are typically formed by firing of screen-printed metallization pastes. However, the stability of surface passivation layers during high temperature contact formation is a major challenge. Here, we investigate the thermal stability of the surface passivation by amorphous silicon nitride double layers (SiNy/SiN x). The SiNy passivation layer is silicon rich with refractive index larger than 3. Whereas the SiNx capping layer has a refractive index of 2.05. Compared to pure hydrogenated amorphous silicon, the nitrogen in the SiNy passivation layer improves the firing stability. We achieve an effective surface recombination velocity after a conventional co-firing process of (5.2±2) cm/s on p-type (1.5 Ωcm) FZ-silicon wafers at an injection density of 1015 cm-3. An analysis of the improved firing stability is presented based on FTIR and hydrogen effusion measurements. The incorporation of an SiNy/SiNx stack into the passivated rear of Cz silicon screen-printed solar cells results in an energy conversion efficiency of 18.3% compared to reference solar cells with conventional aluminum back surface field showing 17.9% efficiency. The short circuit current density increases by up to 0.8 mA/cm2 compared to conventional solar cells due to the improved optical reflectance and rear side surface passivation.
KW - PERC solar cell
KW - Screen-printing
KW - Silicon nitride
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=80855134460&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2011.09.051
DO - 10.1016/j.solmat.2011.09.051
M3 - Article
AN - SCOPUS:80855134460
VL - 96
SP - 180
EP - 185
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -