Details
| Original language | English |
|---|---|
| Pages (from-to) | 1703-1706 |
| Number of pages | 4 |
| Journal | Microelectronics reliability |
| Volume | 36 |
| Issue number | 11-12 SPEC. ISS. |
| Publication status | Published - 1996 |
Abstract
For different double layer metallization structures the thermal-electrical-mechanical stress due to the mismatch of thermal expansion coefficients and elastic moduli was calculated by finite element analysis. A quantitative comparison between a conventional structure with small aluminum step coverage as well as an aluminum plug, a tungsten filled via structure and a structure with a barrier layer was done. The influence of applied current density, metallization length and passivation thickness and material was investigated for the tungsten filled via structure.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronics reliability, Vol. 36, No. 11-12 SPEC. ISS., 1996, p. 1703-1706.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Finite element investigations of mechanical stress in metallization structures
AU - Weide, K.
AU - Yu, X.
AU - Menhorn, F.
N1 - Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1996
Y1 - 1996
N2 - For different double layer metallization structures the thermal-electrical-mechanical stress due to the mismatch of thermal expansion coefficients and elastic moduli was calculated by finite element analysis. A quantitative comparison between a conventional structure with small aluminum step coverage as well as an aluminum plug, a tungsten filled via structure and a structure with a barrier layer was done. The influence of applied current density, metallization length and passivation thickness and material was investigated for the tungsten filled via structure.
AB - For different double layer metallization structures the thermal-electrical-mechanical stress due to the mismatch of thermal expansion coefficients and elastic moduli was calculated by finite element analysis. A quantitative comparison between a conventional structure with small aluminum step coverage as well as an aluminum plug, a tungsten filled via structure and a structure with a barrier layer was done. The influence of applied current density, metallization length and passivation thickness and material was investigated for the tungsten filled via structure.
UR - http://www.scopus.com/inward/record.url?scp=16344373055&partnerID=8YFLogxK
U2 - 10.1016/0026-2714(96)00178-3
DO - 10.1016/0026-2714(96)00178-3
M3 - Article
AN - SCOPUS:16344373055
VL - 36
SP - 1703
EP - 1706
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 11-12 SPEC. ISS.
ER -