Details
| Original language | English |
|---|---|
| Pages (from-to) | 111-114 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 32 |
| Issue number | 1-2 SPEC. ISS. |
| Publication status | Published - 1 May 2006 |
Abstract
We report on photoluminescence investigations of individual InAs quantum dots embedded in an AlAs matrix which emit in the visible region, in contrast to the more traditional InAs/GaAs system. Biexciton binding energies, considerably larger than for InAs/GaAs dots, up to 9 meV are observed. The biexciton binding energy decreases with decreasing dot size, reflecting a possible crossover to an antibinding regime. Exciton and biexciton emission consists of linearly cross polarized doublets due to a large fine structure splitting up to 0.3 meV of the bright exciton state. With increasing exciton transition energy the fine structure splitting decreases down to zero at about 1.63 eV. Differences with InAs/GaAs QDs may be attributed to major dot shape anisotropy and/or larger confinement due to higher AlAs barriers.
Keywords
- Biexcitons, III-V semiconductors, Photoluminescence, Single quantum dots
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2 SPEC. ISS., 01.05.2006, p. 111-114.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Fine structure splitting and biexciton binding energy in single self-assembled InAs/AlAs quantum dots
AU - Sarkar, D.
AU - van der Meulen, H. P.
AU - Calleja, J. M.
AU - Becker, J. M.
AU - Haug, R. J.
AU - Pierz, K.
N1 - Funding information: This work was partially supported by the Spanish MCYT (MAT2002-00139), the CAM (GR/MAT/ 0099/2004) and the European network “Collect” (HPRN-CT-2002-00291).
PY - 2006/5/1
Y1 - 2006/5/1
N2 - We report on photoluminescence investigations of individual InAs quantum dots embedded in an AlAs matrix which emit in the visible region, in contrast to the more traditional InAs/GaAs system. Biexciton binding energies, considerably larger than for InAs/GaAs dots, up to 9 meV are observed. The biexciton binding energy decreases with decreasing dot size, reflecting a possible crossover to an antibinding regime. Exciton and biexciton emission consists of linearly cross polarized doublets due to a large fine structure splitting up to 0.3 meV of the bright exciton state. With increasing exciton transition energy the fine structure splitting decreases down to zero at about 1.63 eV. Differences with InAs/GaAs QDs may be attributed to major dot shape anisotropy and/or larger confinement due to higher AlAs barriers.
AB - We report on photoluminescence investigations of individual InAs quantum dots embedded in an AlAs matrix which emit in the visible region, in contrast to the more traditional InAs/GaAs system. Biexciton binding energies, considerably larger than for InAs/GaAs dots, up to 9 meV are observed. The biexciton binding energy decreases with decreasing dot size, reflecting a possible crossover to an antibinding regime. Exciton and biexciton emission consists of linearly cross polarized doublets due to a large fine structure splitting up to 0.3 meV of the bright exciton state. With increasing exciton transition energy the fine structure splitting decreases down to zero at about 1.63 eV. Differences with InAs/GaAs QDs may be attributed to major dot shape anisotropy and/or larger confinement due to higher AlAs barriers.
KW - Biexcitons
KW - III-V semiconductors
KW - Photoluminescence
KW - Single quantum dots
UR - http://www.scopus.com/inward/record.url?scp=33646189006&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2005.12.102
DO - 10.1016/j.physe.2005.12.102
M3 - Article
AN - SCOPUS:33646189006
VL - 32
SP - 111
EP - 114
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-2 SPEC. ISS.
ER -