Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping

Research output: Contribution to journal › Article › Research › peer review

Authors

  • M. G. Vivas
  • D. S. Manoel
  • J. Dipold
  • R. J. Martins
  • R. D. Fonseca
  • I. Manglano-Clavero
  • C. Margenfeld
  • A. Waag
  • T. Voss
  • C. R. Mendonca

External Research Organisations

  • Universidade Federal de Alfenas
  • Universidade de Sao Paulo
  • Popular University of Cesar
  • Technische Universität Braunschweig
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Details

Original languageEnglish
Article number153828
JournalJournal of alloys and compounds
Volume825
Publication statusPublished - 5 Jun 2020
Externally publishedYes

Abstract

Semiconductors thin films are the foundation of modern technology. While the nonlinear optical (NLO) properties of bulk semiconductors have been systematically studied in the last three decades, it is still a great challenge to obtain them for semiconductors thin films, as the high laser irradiance in NLO experiments tends to irreversibly damage the thin films. In addition, tuning the NLO response of semiconductor thin films by alloying and doping has not been explored yet. Here, we study the influence of the Aluminum content in AlxGa1-xN thin films and the n-type doping concentration in GaN thin films on their two-photon absorption (2PA) coefficients. For this, we investigate five different GaN-based thin films: an unintentionally doped one with no Al as a reference, two n-type doped GaN films with distinct concentrations of silicon impurities, and two AlxGa1-xN alloys with an aluminum content of 5.5% and 9.0%, respectively. The femtosecond 2PA spectra reveal that doping impurities reduce the non-linear coefficients (∼10%), while alloying with Al enhances the 2PA coefficient up to 30%. We use the model of Brandi and Araujo to determine Kane's energy parameter related to the transition matrix element for each sample and compare them with recent theoretical studies based on the k·p theory where an excellent agreement is found.

Keywords

    AlGaN thin films, Alloying and doping, Gallium nitride, Nonlinear optical properties, Spectroscopy, Two-photon absorption

ASJC Scopus subject areas

Cite this

Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping. / Vivas, M. G.; Manoel, D. S.; Dipold, J. et al.
In: Journal of alloys and compounds, Vol. 825, 153828, 05.06.2020.

Research output: Contribution to journal › Article › Research › peer review

Vivas, MG, Manoel, DS, Dipold, J, Martins, RJ, Fonseca, RD, Manglano-Clavero, I, Margenfeld, C, Waag, A, Voss, T & Mendonca, CR 2020, 'Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping', Journal of alloys and compounds, vol. 825, 153828. https://doi.org/10.1016/j.jallcom.2020.153828
Vivas, M. G., Manoel, D. S., Dipold, J., Martins, R. J., Fonseca, R. D., Manglano-Clavero, I., Margenfeld, C., Waag, A., Voss, T., & Mendonca, C. R. (2020). Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping. Journal of alloys and compounds, 825, Article 153828. https://doi.org/10.1016/j.jallcom.2020.153828
Vivas MG, Manoel DS, Dipold J, Martins RJ, Fonseca RD, Manglano-Clavero I et al. Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping. Journal of alloys and compounds. 2020 Jun 5;825:153828. doi: 10.1016/j.jallcom.2020.153828
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title = "Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping",
abstract = "Semiconductors thin films are the foundation of modern technology. While the nonlinear optical (NLO) properties of bulk semiconductors have been systematically studied in the last three decades, it is still a great challenge to obtain them for semiconductors thin films, as the high laser irradiance in NLO experiments tends to irreversibly damage the thin films. In addition, tuning the NLO response of semiconductor thin films by alloying and doping has not been explored yet. Here, we study the influence of the Aluminum content in AlxGa1-xN thin films and the n-type doping concentration in GaN thin films on their two-photon absorption (2PA) coefficients. For this, we investigate five different GaN-based thin films: an unintentionally doped one with no Al as a reference, two n-type doped GaN films with distinct concentrations of silicon impurities, and two AlxGa1-xN alloys with an aluminum content of 5.5% and 9.0%, respectively. The femtosecond 2PA spectra reveal that doping impurities reduce the non-linear coefficients (∼10%), while alloying with Al enhances the 2PA coefficient up to 30%. We use the model of Brandi and Araujo to determine Kane's energy parameter related to the transition matrix element for each sample and compare them with recent theoretical studies based on the k·p theory where an excellent agreement is found.",
keywords = "AlGaN thin films, Alloying and doping, Gallium nitride, Nonlinear optical properties, Spectroscopy, Two-photon absorption",
author = "Vivas, {M. G.} and Manoel, {D. S.} and J. Dipold and Martins, {R. J.} and Fonseca, {R. D.} and I. Manglano-Clavero and C. Margenfeld and A. Waag and T. Voss and Mendonca, {C. R.}",
note = "Funding information: Financial support from FAPESP (Funda{\c c}{\~a}o de Amparo {\`a} Pesquisa do Estado de S{\~a}o Paulo, grants 2018/11283-7 and 2015/20032-0 ), FAPEMIG (Funda{\c c}{\~a}o de Amparo {\`a} Pesquisa do Estado de Minas Gerais, APQ-01469-18 ), CNPq (Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tecnol{\'o}gico), Coordena{\c c}{\~a}o de Aperfei{\c c}oamento de Pessoal de N{\'i}vel Superior ( CAPES ) and the Air Force Office of Scientific Research ( FA9550-15-1-0521 ) are acknowledged. A. W. and T. V. acknowledge funding by the Deutsche Forschungsgemeinschaft ( DFG , German Research Foundation ) under Germany{\textquoteright}s Excellence Strategy – EXC-2123/1.",
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TY - JOUR

T1 - Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping

AU - Vivas, M. G.

AU - Manoel, D. S.

AU - Dipold, J.

AU - Martins, R. J.

AU - Fonseca, R. D.

AU - Manglano-Clavero, I.

AU - Margenfeld, C.

AU - Waag, A.

AU - Voss, T.

AU - Mendonca, C. R.

N1 - Funding information: Financial support from FAPESP (Fundação de Amparo à Pesquisa do Estado de São Paulo, grants 2018/11283-7 and 2015/20032-0 ), FAPEMIG (Fundação de Amparo à Pesquisa do Estado de Minas Gerais, APQ-01469-18 ), CNPq (Conselho Nacional de Desenvolvimento Científico e Tecnológico), Coordenação de Aperfeiçoamento de Pessoal de Nível Superior ( CAPES ) and the Air Force Office of Scientific Research ( FA9550-15-1-0521 ) are acknowledged. A. W. and T. V. acknowledge funding by the Deutsche Forschungsgemeinschaft ( DFG , German Research Foundation ) under Germany’s Excellence Strategy – EXC-2123/1.

PY - 2020/6/5

Y1 - 2020/6/5

N2 - Semiconductors thin films are the foundation of modern technology. While the nonlinear optical (NLO) properties of bulk semiconductors have been systematically studied in the last three decades, it is still a great challenge to obtain them for semiconductors thin films, as the high laser irradiance in NLO experiments tends to irreversibly damage the thin films. In addition, tuning the NLO response of semiconductor thin films by alloying and doping has not been explored yet. Here, we study the influence of the Aluminum content in AlxGa1-xN thin films and the n-type doping concentration in GaN thin films on their two-photon absorption (2PA) coefficients. For this, we investigate five different GaN-based thin films: an unintentionally doped one with no Al as a reference, two n-type doped GaN films with distinct concentrations of silicon impurities, and two AlxGa1-xN alloys with an aluminum content of 5.5% and 9.0%, respectively. The femtosecond 2PA spectra reveal that doping impurities reduce the non-linear coefficients (∼10%), while alloying with Al enhances the 2PA coefficient up to 30%. We use the model of Brandi and Araujo to determine Kane's energy parameter related to the transition matrix element for each sample and compare them with recent theoretical studies based on the k·p theory where an excellent agreement is found.

AB - Semiconductors thin films are the foundation of modern technology. While the nonlinear optical (NLO) properties of bulk semiconductors have been systematically studied in the last three decades, it is still a great challenge to obtain them for semiconductors thin films, as the high laser irradiance in NLO experiments tends to irreversibly damage the thin films. In addition, tuning the NLO response of semiconductor thin films by alloying and doping has not been explored yet. Here, we study the influence of the Aluminum content in AlxGa1-xN thin films and the n-type doping concentration in GaN thin films on their two-photon absorption (2PA) coefficients. For this, we investigate five different GaN-based thin films: an unintentionally doped one with no Al as a reference, two n-type doped GaN films with distinct concentrations of silicon impurities, and two AlxGa1-xN alloys with an aluminum content of 5.5% and 9.0%, respectively. The femtosecond 2PA spectra reveal that doping impurities reduce the non-linear coefficients (∼10%), while alloying with Al enhances the 2PA coefficient up to 30%. We use the model of Brandi and Araujo to determine Kane's energy parameter related to the transition matrix element for each sample and compare them with recent theoretical studies based on the k·p theory where an excellent agreement is found.

KW - AlGaN thin films

KW - Alloying and doping

KW - Gallium nitride

KW - Nonlinear optical properties

KW - Spectroscopy

KW - Two-photon absorption

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U2 - 10.1016/j.jallcom.2020.153828

DO - 10.1016/j.jallcom.2020.153828

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AN - SCOPUS:85078677412

VL - 825

JO - Journal of alloys and compounds

JF - Journal of alloys and compounds

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