Femtosecond pulse damage behavior of oxide dielectric thin films

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • Mark Mero
  • Jianhua Liu
  • Joachim Zeller
  • Wolfgang Rudolph
  • Kai Starke
  • Detlev Ristau

External Research Organisations

  • University of New Mexico
  • Fudan University
  • Laser Zentrum Hannover e.V. (LZH)
View graph of relations

Details

Original languageEnglish
Title of host publicationLaser-Induced Damage in Optical Materials: 2003
Subtitle of host publication35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado
Place of PublicationBellingham
PublisherSPIE
Pages8-16
Number of pages9
ISBN (print)0-8194-5163-0
Publication statusPublished - 10 Jun 2004
Externally publishedYes
Event35th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials 2003 - Boulder, CO, United States
Duration: 22 Sept 2003 → 24 Sept 2003

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume5273
ISSN (Print)0277-786X

Abstract

Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.

Keywords

    Laser-induced breakdown, Strong field ionization, Ultrafast processes in condensed matter

ASJC Scopus subject areas

Cite this

Femtosecond pulse damage behavior of oxide dielectric thin films. / Mero, Mark; Liu, Jianhua; Zeller, Joachim et al.
Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Bellingham: SPIE, 2004. p. 8-16 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5273).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Mero, M, Liu, J, Zeller, J, Rudolph, W, Starke, K & Ristau, D 2004, Femtosecond pulse damage behavior of oxide dielectric thin films. in Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Proceedings of SPIE - The International Society for Optical Engineering, vol. 5273, SPIE, Bellingham, pp. 8-16, 35th Annual Boulder Damage Symposium, Boulder, CO, United States, 22 Sept 2003. https://doi.org/10.1117/12.524571
Mero, M., Liu, J., Zeller, J., Rudolph, W., Starke, K., & Ristau, D. (2004). Femtosecond pulse damage behavior of oxide dielectric thin films. In Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado (pp. 8-16). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5273). SPIE. https://doi.org/10.1117/12.524571
Mero M, Liu J, Zeller J, Rudolph W, Starke K, Ristau D. Femtosecond pulse damage behavior of oxide dielectric thin films. In Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Bellingham: SPIE. 2004. p. 8-16. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.524571
Mero, Mark ; Liu, Jianhua ; Zeller, Joachim et al. / Femtosecond pulse damage behavior of oxide dielectric thin films. Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Bellingham : SPIE, 2004. pp. 8-16 (Proceedings of SPIE - The International Society for Optical Engineering).
Download
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abstract = "Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.",
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