Femtosecond laser pulse induced breakdown in dielectric thin films

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Jayesh C. Jasapara
  • A. V. Vasudevan Nampoothiri
  • Wolfgang G. Rudolph
  • Detlev Ristau
  • Kai Starke

External Research Organisations

  • University of New Mexico
  • Laser Zentrum Hannover e.V. (LZH)
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Details

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number4
Publication statusPublished - 9 Jan 2001
Externally publishedYes

Abstract

Laser-induced breakdown of a high-quality mirror consisting of alternating 㮸/4 layers of Ta2O5 and SiO2 and a single 500-nm thin film of Ta2O5 were studied with amplified and unamplified femtosecond pulses. The experimental data can be fitted with a model taking into account multiphoton absorption, impact ionization, and local intensity enhancements due to interference effects in the films. Incubation effects are observed when the coatings are damaged with multiple pulses from a femtosecond oscillator. The results indicate that state of the art, high-quality thin films show a damage behavior that is similar to bulk materials. Defects and impurities play a negligible role.

ASJC Scopus subject areas

Cite this

Femtosecond laser pulse induced breakdown in dielectric thin films. / Jasapara, Jayesh C.; Nampoothiri, A. V. Vasudevan ; Rudolph, Wolfgang G. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 4, 09.01.2001.

Research output: Contribution to journalArticleResearchpeer review

Jasapara JC, Nampoothiri AVV, Rudolph WG, Ristau D, Starke K. Femtosecond laser pulse induced breakdown in dielectric thin films. Physical Review B - Condensed Matter and Materials Physics. 2001 Jan 9;63(4). doi: 10.1103/PhysRevB.63.045117
Jasapara, Jayesh C. ; Nampoothiri, A. V. Vasudevan ; Rudolph, Wolfgang G. et al. / Femtosecond laser pulse induced breakdown in dielectric thin films. In: Physical Review B - Condensed Matter and Materials Physics. 2001 ; Vol. 63, No. 4.
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