Details
| Original language | English |
|---|---|
| Pages (from-to) | 1820-1823 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 42 |
| Issue number | 6 |
| Publication status | Published - 28 Dec 2009 |
| Externally published | Yes |
Abstract
Femtosecond laser treatments (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The laser fluences needed for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33). The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.
Keywords
- Femtosecond laser crystallization, Raman scattering, Silicon nanoclusters, Silicon nitride
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 42, No. 6, 28.12.2009, p. 1820-1823.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films
AU - Volodin, V. A.
AU - Korchagina, T. T.
AU - Koch, J.
AU - Chichkov, B. N.
PY - 2009/12/28
Y1 - 2009/12/28
N2 - Femtosecond laser treatments (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The laser fluences needed for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33). The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.
AB - Femtosecond laser treatments (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The laser fluences needed for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33). The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.
KW - Femtosecond laser crystallization
KW - Raman scattering
KW - Silicon nanoclusters
KW - Silicon nitride
UR - http://www.scopus.com/inward/record.url?scp=77949275762&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2009.12.034
DO - 10.1016/j.physe.2009.12.034
M3 - Article
AN - SCOPUS:77949275762
VL - 42
SP - 1820
EP - 1823
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 6
ER -