Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films

Vladimir A. Volodin; Taisiya T. Korchagina; Gennadiy N. Kamaev; Aleksandr Kh Antonenko; Jurgen Koch; Boris N. Chichkov

doi:10.1117/12.853385

Details

Original language	English
Title of host publication	International Conference on Micro- and Nano-Electronics 2009
Publication status	Published - 26 Feb 2010
Externally published	Yes
Event	International Conference on Micro- and Nano-Electronics 2009 - Zvenigorod, Russian Federation Duration: 5 Oct 2009 → 9 Oct 2009

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7521
ISSN (Print)	0277-786X

Abstract

Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiN_x:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

Keywords

non-refractory substrates, pulse laser annealing, Raman spectroscopy, silicon nanoclusters, silicon-rich nitride films

ASJC Scopus subject areas

Materials Science(all)
Electronic, Optical and Magnetic Materials
Physics and Astronomy(all)
Condensed Matter Physics
Computer Science(all)
Computer Science Applications
Mathematics(all)
Applied Mathematics
Engineering(all)
Electrical and Electronic Engineering

Cite this

Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. / Volodin, Vladimir A.; Korchagina, Taisiya T.; Kamaev, Gennadiy N. et al.
International Conference on Micro- and Nano-Electronics 2009. 2010. 75210X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7521).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Volodin, VA, Korchagina, TT, Kamaev, GN, Antonenko, AK, Koch, J & Chichkov, BN 2010, Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. in International Conference on Micro- and Nano-Electronics 2009., 75210X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7521, International Conference on Micro- and Nano-Electronics 2009, Zvenigorod, Russian Federation, 5 Oct 2009. https://doi.org/10.1117/12.853385

Volodin, V. A., Korchagina, T. T., Kamaev, G. N., Antonenko, A. K., Koch, J., & Chichkov, B. N. (2010). Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. In International Conference on Micro- and Nano-Electronics 2009 Article 75210X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7521). https://doi.org/10.1117/12.853385

Volodin VA, Korchagina TT, Kamaev GN, Antonenko AK, Koch J, Chichkov BN. Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. In International Conference on Micro- and Nano-Electronics 2009. 2010. 75210X. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.853385

Volodin, Vladimir A. ; Korchagina, Taisiya T. ; Kamaev, Gennadiy N. et al. / Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. International Conference on Micro- and Nano-Electronics 2009. 2010. (Proceedings of SPIE - The International Society for Optical Engineering).

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@inproceedings{d0b6fbf731134ee3aedfdef73328ce59,

title = "Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films",

abstract = "Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.",

keywords = "non-refractory substrates, pulse laser annealing, Raman spectroscopy, silicon nanoclusters, silicon-rich nitride films",

author = "Volodin, {Vladimir A.} and Korchagina, {Taisiya T.} and Kamaev, {Gennadiy N.} and Antonenko, {Aleksandr Kh} and Jurgen Koch and Chichkov, {Boris N.}",

year = "2010",

month = feb,

day = "26",

doi = "10.1117/12.853385",

language = "English",

isbn = "9780819479112",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "International Conference on Micro- and Nano-Electronics 2009",

note = "International Conference on Micro- and Nano-Electronics 2009 ; Conference date: 05-10-2009 Through 09-10-2009",

}

Download

TY - GEN

T1 - Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films

AU - Volodin, Vladimir A.

AU - Korchagina, Taisiya T.

AU - Kamaev, Gennadiy N.

AU - Antonenko, Aleksandr Kh

AU - Koch, Jurgen

AU - Chichkov, Boris N.

PY - 2010/2/26

Y1 - 2010/2/26

N2 - Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

AB - Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

KW - non-refractory substrates

KW - pulse laser annealing

KW - Raman spectroscopy

KW - silicon nanoclusters

KW - silicon-rich nitride films

UR - http://www.scopus.com/inward/record.url?scp=79551690492&partnerID=8YFLogxK

U2 - 10.1117/12.853385

DO - 10.1117/12.853385

M3 - Conference contribution

AN - SCOPUS:79551690492

SN - 9780819479112

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - International Conference on Micro- and Nano-Electronics 2009

T2 - International Conference on Micro- and Nano-Electronics 2009

Y2 - 5 October 2009 through 9 October 2009

ER -

Research@Leibniz University