Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Irene Manglano Clavero
  • Christoph Margenfeld
  • Jana Hartmann
  • Andreas Waag

External Research Organisations

  • Technische Universität Braunschweig
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Details

Original languageEnglish
Pages (from-to)263-272
Number of pages10
JournalCrystal Growth and Design
Volume23
Issue number1
Early online date22 Dec 2022
Publication statusPublished - 4 Jan 2023
Externally publishedYes

Abstract

In this work, the influence of temperature and ammonia partial pressure on the GaN shell morphology grown on GaN microfin cores is investigated. We demonstrate that GaN overgrowth on 3D structures above a temperature of 1000 °C is determined by the competition between growth and decomposition that results in the redistribution of material between coexisting surfaces due to their different thermal stabilities. By studying the GaN shell growth under different reactor parameters, we show that decomposition processes, often disregarded during planar growth, strongly influence the vertical-to-lateral distribution of material during GaN growth on 3D structures. We observed that GaN shell growth on a-plane microfins at high temperatures and high ammonia fluxes results in an increase of the decomposition rate of the c-plane surfaces and thus, reduces the growth rate in the vertical direction. On the contrary, the lateral growth rate increases due to the diffusion of material from the less stable c-plane facet to the more stable a-plane facet where it reincorporates. Furthermore, under certain growth conditions, the decomposition of the c-plane outweighed the incorporation, reducing the height of the initial 3D structure during growth, while still gradually growing in the lateral direction, which resulted in the development of inclined facets. These findings highlight the high sensitivity of 3D structures to thermal decomposition processes and redistribution of material. Therefore, the understanding of these mechanisms and their interaction is required for controlling and optimizing growth on these architectures.

ASJC Scopus subject areas

Cite this

Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures. / Manglano Clavero, Irene; Margenfeld, Christoph; Hartmann, Jana et al.
In: Crystal Growth and Design, Vol. 23, No. 1, 04.01.2023, p. 263-272.

Research output: Contribution to journalArticleResearchpeer review

Manglano Clavero I, Margenfeld C, Hartmann J, Waag A. Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures. Crystal Growth and Design. 2023 Jan 4;23(1):263-272. Epub 2022 Dec 22. doi: 10.1021/acs.cgd.2c00989
Manglano Clavero, Irene ; Margenfeld, Christoph ; Hartmann, Jana et al. / Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures. In: Crystal Growth and Design. 2023 ; Vol. 23, No. 1. pp. 263-272.
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