Details
| Original language | English |
|---|---|
| Pages (from-to) | 250-253 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 37 |
| Issue number | 1-2 |
| Early online date | 21 Aug 2006 |
| Publication status | Published - Mar 2007 |
Abstract
We show a new way to fabricate well-defined individual dislocations in SiGe. We started with a fully pseudomorphic but metastable SiGe layer grown on Si(0 0 1) by molecular beam epitaxy. Next, elongated (∼1 mm) mesa stripes with various widths (0.5-3 μm) were fabricated by a combination of isotropic and anisotropic etching. For smaller stripes, elastic relaxation of the strained SiGe layer can occur, transforming the originally biaxial strained layer into uniaxial strained subsystems. Subsequent strain relaxation caused by high temperature treatments leads to the formation of individual dislocation along the mesa stripes. The number of parallel dislocation can be adjusted by the original strain (Si:Ge ratio and layer thickness) and the mesa widths. We were able to fabricate structures with exactly one dislocation. Finally, contact pads were added to the stripes enabling the electrical characterization of individual dislocation.
Keywords
- Dislocation engineering, Mesa structures, Silicon-germanium
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 37, No. 1-2, 03.2007, p. 250-253.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Fabrication of well-defined individual dislocations in SiGe as a novel one-dimensional system
AU - Bugiel, E.
AU - Lewerenz, M.
AU - Osten, H. J.
PY - 2007/3
Y1 - 2007/3
N2 - We show a new way to fabricate well-defined individual dislocations in SiGe. We started with a fully pseudomorphic but metastable SiGe layer grown on Si(0 0 1) by molecular beam epitaxy. Next, elongated (∼1 mm) mesa stripes with various widths (0.5-3 μm) were fabricated by a combination of isotropic and anisotropic etching. For smaller stripes, elastic relaxation of the strained SiGe layer can occur, transforming the originally biaxial strained layer into uniaxial strained subsystems. Subsequent strain relaxation caused by high temperature treatments leads to the formation of individual dislocation along the mesa stripes. The number of parallel dislocation can be adjusted by the original strain (Si:Ge ratio and layer thickness) and the mesa widths. We were able to fabricate structures with exactly one dislocation. Finally, contact pads were added to the stripes enabling the electrical characterization of individual dislocation.
AB - We show a new way to fabricate well-defined individual dislocations in SiGe. We started with a fully pseudomorphic but metastable SiGe layer grown on Si(0 0 1) by molecular beam epitaxy. Next, elongated (∼1 mm) mesa stripes with various widths (0.5-3 μm) were fabricated by a combination of isotropic and anisotropic etching. For smaller stripes, elastic relaxation of the strained SiGe layer can occur, transforming the originally biaxial strained layer into uniaxial strained subsystems. Subsequent strain relaxation caused by high temperature treatments leads to the formation of individual dislocation along the mesa stripes. The number of parallel dislocation can be adjusted by the original strain (Si:Ge ratio and layer thickness) and the mesa widths. We were able to fabricate structures with exactly one dislocation. Finally, contact pads were added to the stripes enabling the electrical characterization of individual dislocation.
KW - Dislocation engineering
KW - Mesa structures
KW - Silicon-germanium
UR - http://www.scopus.com/inward/record.url?scp=33947096891&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2006.07.004
DO - 10.1016/j.physe.2006.07.004
M3 - Article
AN - SCOPUS:33947096891
VL - 37
SP - 250
EP - 253
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-2
ER -