Details
| Original language | English |
|---|---|
| Pages (from-to) | 2041-2046 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 24 |
| Issue number | 4 |
| Publication status | Published - 25 Jul 2006 |
Abstract
We study the growth of double-barrier insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of nanostructures with continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. The approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. As an example, we demonstrate the growth of epitaxial silicon buried in epitaxial Gd 2O3. The incorporation of epitaxial Si islands into single-crystalline Gd2O3 is also demonstrated.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 4, 25.07.2006, p. 2041-2046.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Fabrication of single-crystalline insulator/Si/insulator nanostructures
AU - Fissel, A.
AU - Kühne, D.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 2006/7/25
Y1 - 2006/7/25
N2 - We study the growth of double-barrier insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of nanostructures with continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. The approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. As an example, we demonstrate the growth of epitaxial silicon buried in epitaxial Gd 2O3. The incorporation of epitaxial Si islands into single-crystalline Gd2O3 is also demonstrated.
AB - We study the growth of double-barrier insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of nanostructures with continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. The approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. As an example, we demonstrate the growth of epitaxial silicon buried in epitaxial Gd 2O3. The incorporation of epitaxial Si islands into single-crystalline Gd2O3 is also demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=33746498499&partnerID=8YFLogxK
U2 - 10.1116/1.2213266
DO - 10.1116/1.2213266
M3 - Article
AN - SCOPUS:33746498499
VL - 24
SP - 2041
EP - 2046
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -