Details
| Original language | English |
|---|---|
| Pages (from-to) | 457-459 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 76 |
| Issue number | 4 |
| Publication status | Published - 24 Jan 2000 |
Abstract
The surface layers of a GaAs/AlGaAs heterostructure are locally oxidized using an atomic force microscope. The local anodic oxidation depletes the underlying two-dimensional electron gas leading to the formation of tunneling barriers. The height of the barriers is determined by measuring the thermally activated current. By varying the oxidation current, the barrier heights can be tuned between a few meV and more than 100 meV. Using these barriers as tunneling elements, a side gated single-electron transistor is fabricated.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 76, No. 4, 24.01.2000, p. 457-459.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system
AU - Keyser, U. F.
AU - Schumacher, H. W.
AU - Zeitler, U.
AU - Haug, R. J.
AU - Eberl, K.
PY - 2000/1/24
Y1 - 2000/1/24
N2 - The surface layers of a GaAs/AlGaAs heterostructure are locally oxidized using an atomic force microscope. The local anodic oxidation depletes the underlying two-dimensional electron gas leading to the formation of tunneling barriers. The height of the barriers is determined by measuring the thermally activated current. By varying the oxidation current, the barrier heights can be tuned between a few meV and more than 100 meV. Using these barriers as tunneling elements, a side gated single-electron transistor is fabricated.
AB - The surface layers of a GaAs/AlGaAs heterostructure are locally oxidized using an atomic force microscope. The local anodic oxidation depletes the underlying two-dimensional electron gas leading to the formation of tunneling barriers. The height of the barriers is determined by measuring the thermally activated current. By varying the oxidation current, the barrier heights can be tuned between a few meV and more than 100 meV. Using these barriers as tunneling elements, a side gated single-electron transistor is fabricated.
UR - http://www.scopus.com/inward/record.url?scp=0000344209&partnerID=8YFLogxK
U2 - 10.1063/1.125786
DO - 10.1063/1.125786
M3 - Article
AN - SCOPUS:0000344209
VL - 76
SP - 457
EP - 459
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 4
ER -