Details
| Original language | English |
|---|---|
| Article number | 2100008 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 15 |
| Issue number | 4 |
| Early online date | 11 Feb 2021 |
| Publication status | Published - 7 Apr 2021 |
Abstract
The carrier lifetime of n-type silicon wafers coated with the conducting polymer PEDOT:PSS as a function of the excess carrier concentration Δp within the wafer is characterized using the quasi-steady-state photoconductance (QSSPC) method, and a drastic increase in the measured apparent lifetime τ app with decreasing Δp is observed. The observed increase with the depletion region modulation (DRM) effect is explained, as PEDOT:PSS-coated p-type silicon wafers do not show any increase in lifetime toward low injection levels. By modeling the measured τ app(Δp) curves on n-type silicon including interface recombination as well as the DRM effect, the interface recombination velocity as well as the band bending Ψ s within the silicon induced by PEDOT:PSS are able to be extracted. The impact of adding sorbitol to the PEDOT:PSS dispersion on the τ app(Δp) curves is examined, and it is demonstrated that the admixture of sorbitol improves chemical interface passivation but leaves the band bending within the silicon bulk toward the PEDOT:PSS/c-Si interface unaffected.
Keywords
- carrier lifetimes, depletion region modulation, heterojunctions, PEDOT:PSS, silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- General Materials Science
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In: Physica Status Solidi - Rapid Research Letters, Vol. 15, No. 4, 2100008, 07.04.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Extraction of PEDOT:PSS/c‐Si Junction Properties by Modeling of Injection‐Dependent Lifetime Measurements Including Depletion Region Modulation
AU - Halbich, Marc-Uwe
AU - Schmidt, Jan
N1 - Funding Information: This work was funded by the German State of Lower Saxony. The content is the responsibility of the authors.
PY - 2021/4/7
Y1 - 2021/4/7
N2 - The carrier lifetime of n-type silicon wafers coated with the conducting polymer PEDOT:PSS as a function of the excess carrier concentration Δp within the wafer is characterized using the quasi-steady-state photoconductance (QSSPC) method, and a drastic increase in the measured apparent lifetime τ app with decreasing Δp is observed. The observed increase with the depletion region modulation (DRM) effect is explained, as PEDOT:PSS-coated p-type silicon wafers do not show any increase in lifetime toward low injection levels. By modeling the measured τ app(Δp) curves on n-type silicon including interface recombination as well as the DRM effect, the interface recombination velocity as well as the band bending Ψ s within the silicon induced by PEDOT:PSS are able to be extracted. The impact of adding sorbitol to the PEDOT:PSS dispersion on the τ app(Δp) curves is examined, and it is demonstrated that the admixture of sorbitol improves chemical interface passivation but leaves the band bending within the silicon bulk toward the PEDOT:PSS/c-Si interface unaffected.
AB - The carrier lifetime of n-type silicon wafers coated with the conducting polymer PEDOT:PSS as a function of the excess carrier concentration Δp within the wafer is characterized using the quasi-steady-state photoconductance (QSSPC) method, and a drastic increase in the measured apparent lifetime τ app with decreasing Δp is observed. The observed increase with the depletion region modulation (DRM) effect is explained, as PEDOT:PSS-coated p-type silicon wafers do not show any increase in lifetime toward low injection levels. By modeling the measured τ app(Δp) curves on n-type silicon including interface recombination as well as the DRM effect, the interface recombination velocity as well as the band bending Ψ s within the silicon induced by PEDOT:PSS are able to be extracted. The impact of adding sorbitol to the PEDOT:PSS dispersion on the τ app(Δp) curves is examined, and it is demonstrated that the admixture of sorbitol improves chemical interface passivation but leaves the band bending within the silicon bulk toward the PEDOT:PSS/c-Si interface unaffected.
KW - carrier lifetimes
KW - depletion region modulation
KW - heterojunctions
KW - PEDOT:PSS
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=85101043927&partnerID=8YFLogxK
U2 - 10.1002/pssr.202100008
DO - 10.1002/pssr.202100008
M3 - Article
VL - 15
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 4
M1 - 2100008
ER -