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Extended Cox & Strack analysis for the contact resistance of planar samples with carrier-selective junctions on both sides

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Authors

  • Nils Folchert
  • Rolf Brendel

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)

Details

Original languageEnglish
Article number111304
JournalSolar Energy Materials and Solar Cells
Volume231
Early online date2 Aug 2021
Publication statusPublished - Oct 2021

Abstract

We review the famous Cox & Strack equation that is commonly applied in contact resistance measurements of samples with a negligible contact resistance at the sample backside. We apply geometric interpretations to extend the Cox & Strack model a) to samples that have a non-negligible contact resistance not only on the front- but also on the back-side and b) to junctions with a buried contact resistance underneath a conductive layer. Case a) is for example a symmetric sample with a single material junction on both sample surfaces. Case b) could be a poly-Si/SiOx/c-Si or a-Si/c-Si hetero-junction. We compare our analytic treatment with rigorous finite-element simulations and find a relative agreement between 2.5 % and 36 % depending on the sample geometry and resistance values. We apply the method to analyze the contact resistance of lifetime samples with both-sided n+/n-type poly-Si junctions.

Keywords

    Contact resistivity, Photovoltaics, Selective contacts, Silicon, Spreading resistance

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Extended Cox & Strack analysis for the contact resistance of planar samples with carrier-selective junctions on both sides. / Folchert, Nils; Brendel, Rolf.
In: Solar Energy Materials and Solar Cells, Vol. 231, 111304, 10.2021.

Research output: Contribution to journalArticleResearchpeer review

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AU - Folchert, Nils

AU - Brendel, Rolf

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KW - Contact resistivity

KW - Photovoltaics

KW - Selective contacts

KW - Silicon

KW - Spreading resistance

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