Details
| Original language | English |
|---|---|
| Article number | 2748 |
| Number of pages | 13 |
| Journal | MATERIALS |
| Volume | 17 |
| Issue number | 11 |
| Publication status | Published - 5 Jun 2024 |
Abstract
Memristors, since their inception, have demonstrated remarkable characteristics, notably the exceptional reconfigurability of their memory. This study delves into electroforming-free (Formula presented.) (YMO)-based resistive switches, emphasizing the reconfigurable memory effect in multiferroic YMO thin films with metallically conducting electrodes and their pivotal role in achieving adaptable frequency responses in impedance circuits consisting of reconfigurable YMO-based resistive switches and no reconfigurable passive elements, e.g., inductors and capacitors. The multiferroic YMO possesses a network of charged domain walls which can be reconfigured by a time-dependent voltage applied between the metallically conducting electrodes. Through experimental demonstrations, this study scrutinizes the impedance response not only for individual switch devices but also for impedance circuitry based on YMO resistive switches in both low- and high-resistance states, interfacing with capacitors and inductors in parallel and series configurations. Scrutinized Nyquist plots visually capture the intricate dynamics of impedance circuitry, revealing the potential of electroforming-free YMO resistive switches in finely tuning frequency responses within impedance circuits. This adaptability, rooted in the unique properties of YMO, signifies a paradigm shift heralding the advent of advanced and flexible electronic technologies.
Keywords
- charged domain walls, conducting filaments, electroforming-free resistive switching, impedance circuit, reconfigurable memory effect, tunable frequency response, ultra-high reconfigurability, vortices, YMnO-based resistive switches
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: MATERIALS, Vol. 17, No. 11, 2748, 05.06.2024.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Exploring the Reconfigurable Memory Effect in Electroforming-Free YMnO3-Based Resistive Switches
T2 - Towards a Tunable Frequency Response
AU - Zhao, Xianyue
AU - Du, Nan
AU - Dellith, Jan
AU - Diegel, Marco
AU - Hübner, Uwe
AU - Wicht, Bernhard
AU - Schmidt, Heidemarie
N1 - Publisher Copyright: © 2024 by the authors.
PY - 2024/6/5
Y1 - 2024/6/5
N2 - Memristors, since their inception, have demonstrated remarkable characteristics, notably the exceptional reconfigurability of their memory. This study delves into electroforming-free (Formula presented.) (YMO)-based resistive switches, emphasizing the reconfigurable memory effect in multiferroic YMO thin films with metallically conducting electrodes and their pivotal role in achieving adaptable frequency responses in impedance circuits consisting of reconfigurable YMO-based resistive switches and no reconfigurable passive elements, e.g., inductors and capacitors. The multiferroic YMO possesses a network of charged domain walls which can be reconfigured by a time-dependent voltage applied between the metallically conducting electrodes. Through experimental demonstrations, this study scrutinizes the impedance response not only for individual switch devices but also for impedance circuitry based on YMO resistive switches in both low- and high-resistance states, interfacing with capacitors and inductors in parallel and series configurations. Scrutinized Nyquist plots visually capture the intricate dynamics of impedance circuitry, revealing the potential of electroforming-free YMO resistive switches in finely tuning frequency responses within impedance circuits. This adaptability, rooted in the unique properties of YMO, signifies a paradigm shift heralding the advent of advanced and flexible electronic technologies.
AB - Memristors, since their inception, have demonstrated remarkable characteristics, notably the exceptional reconfigurability of their memory. This study delves into electroforming-free (Formula presented.) (YMO)-based resistive switches, emphasizing the reconfigurable memory effect in multiferroic YMO thin films with metallically conducting electrodes and their pivotal role in achieving adaptable frequency responses in impedance circuits consisting of reconfigurable YMO-based resistive switches and no reconfigurable passive elements, e.g., inductors and capacitors. The multiferroic YMO possesses a network of charged domain walls which can be reconfigured by a time-dependent voltage applied between the metallically conducting electrodes. Through experimental demonstrations, this study scrutinizes the impedance response not only for individual switch devices but also for impedance circuitry based on YMO resistive switches in both low- and high-resistance states, interfacing with capacitors and inductors in parallel and series configurations. Scrutinized Nyquist plots visually capture the intricate dynamics of impedance circuitry, revealing the potential of electroforming-free YMO resistive switches in finely tuning frequency responses within impedance circuits. This adaptability, rooted in the unique properties of YMO, signifies a paradigm shift heralding the advent of advanced and flexible electronic technologies.
KW - charged domain walls
KW - conducting filaments
KW - electroforming-free resistive switching
KW - impedance circuit
KW - reconfigurable memory effect
KW - tunable frequency response
KW - ultra-high reconfigurability
KW - vortices
KW - YMnO-based resistive switches
UR - http://www.scopus.com/inward/record.url?scp=85195844225&partnerID=8YFLogxK
U2 - 10.3390/ma17112748
DO - 10.3390/ma17112748
M3 - Article
AN - SCOPUS:85195844225
VL - 17
JO - MATERIALS
JF - MATERIALS
SN - 1996-1944
IS - 11
M1 - 2748
ER -