Experimental study of the ground plane in asymmetric coupled silicon lines

Research output: Contribution to conferencePaperResearchpeer review

Authors

  • Uwe Arz
  • Dylan F. Williams
  • Hartmut Grabinski

External Research Organisations

  • National Institute of Standards and Technology (NIST)
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Details

Original languageEnglish
Pages317-320
Number of pages4
Publication statusPublished - 2001
EventIEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging - Cambridge, United States
Duration: 29 Oct 200131 Oct 2001

Conference

ConferenceIEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging
Country/TerritoryUnited States
CityCambridge
Period29 Oct 200131 Oct 2001

Abstract

We use a measurement method designed for coupled lines on highly conductive substrates to characterize identical asymmetric coupled lines fabricated on lossy silicon with and without a metallization plane beneath the two signal conductors. The study illustrates the important role of the return path in determining the electromagnetic coupling between the lines.

ASJC Scopus subject areas

Cite this

Experimental study of the ground plane in asymmetric coupled silicon lines. / Arz, Uwe; Williams, Dylan F.; Grabinski, Hartmut.
2001. 317-320 Paper presented at IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging, Cambridge, Massachusetts, United States.

Research output: Contribution to conferencePaperResearchpeer review

Arz, U, Williams, DF & Grabinski, H 2001, 'Experimental study of the ground plane in asymmetric coupled silicon lines', Paper presented at IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging, Cambridge, United States, 29 Oct 2001 - 31 Oct 2001 pp. 317-320. https://doi.org/10.1109/EPEP.2001.967672
Arz, U., Williams, D. F., & Grabinski, H. (2001). Experimental study of the ground plane in asymmetric coupled silicon lines. 317-320. Paper presented at IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging, Cambridge, Massachusetts, United States. https://doi.org/10.1109/EPEP.2001.967672
Arz U, Williams DF, Grabinski H. Experimental study of the ground plane in asymmetric coupled silicon lines. 2001. Paper presented at IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging, Cambridge, Massachusetts, United States. doi: 10.1109/EPEP.2001.967672
Arz, Uwe ; Williams, Dylan F. ; Grabinski, Hartmut. / Experimental study of the ground plane in asymmetric coupled silicon lines. Paper presented at IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging, Cambridge, Massachusetts, United States.4 p.
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@conference{faa4a55bdafb4e74ac3c7ab0010a86bf,
title = "Experimental study of the ground plane in asymmetric coupled silicon lines",
abstract = "We use a measurement method designed for coupled lines on highly conductive substrates to characterize identical asymmetric coupled lines fabricated on lossy silicon with and without a metallization plane beneath the two signal conductors. The study illustrates the important role of the return path in determining the electromagnetic coupling between the lines.",
author = "Uwe Arz and Williams, {Dylan F.} and Hartmut Grabinski",
year = "2001",
doi = "10.1109/EPEP.2001.967672",
language = "English",
pages = "317--320",
note = "IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging ; Conference date: 29-10-2001 Through 31-10-2001",

}

Download

TY - CONF

T1 - Experimental study of the ground plane in asymmetric coupled silicon lines

AU - Arz, Uwe

AU - Williams, Dylan F.

AU - Grabinski, Hartmut

PY - 2001

Y1 - 2001

N2 - We use a measurement method designed for coupled lines on highly conductive substrates to characterize identical asymmetric coupled lines fabricated on lossy silicon with and without a metallization plane beneath the two signal conductors. The study illustrates the important role of the return path in determining the electromagnetic coupling between the lines.

AB - We use a measurement method designed for coupled lines on highly conductive substrates to characterize identical asymmetric coupled lines fabricated on lossy silicon with and without a metallization plane beneath the two signal conductors. The study illustrates the important role of the return path in determining the electromagnetic coupling between the lines.

UR - http://www.scopus.com/inward/record.url?scp=0035699438&partnerID=8YFLogxK

U2 - 10.1109/EPEP.2001.967672

DO - 10.1109/EPEP.2001.967672

M3 - Paper

AN - SCOPUS:0035699438

SP - 317

EP - 320

T2 - IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging

Y2 - 29 October 2001 through 31 October 2001

ER -