Details
| Original language | English |
|---|---|
| Pages (from-to) | 14729-14732 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 51 |
| Issue number | 20 |
| Publication status | Published - 15 May 1995 |
| Externally published | Yes |
Abstract
We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B, Vol. 51, No. 20, 15.05.1995, p. 14729-14732.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Experimental determination of the quasiparticle charge and the energy gap in the fractional quantum Hall effect
AU - Dorozhkin, S. I.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1995/5/15
Y1 - 1995/5/15
N2 - We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.
AB - We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.
UR - http://www.scopus.com/inward/record.url?scp=0004425772&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.51.14729
DO - 10.1103/PhysRevB.51.14729
M3 - Article
AN - SCOPUS:0004425772
VL - 51
SP - 14729
EP - 14732
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 20
ER -