Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE |
| Subtitle of host publication | The International Society for Optical Engineering |
| Pages | 185-194 |
| Number of pages | 10 |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | Quantum Well and Superlattice Physics VI - San Jose, CA, USA Duration: 29 Jan 1996 → 30 Jan 1996 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 2694 |
| ISSN (Print) | 0277-786X |
Abstract
We use capacitance and photoluminescence spectroscopy to study the energy splitting of electron and hole states in InAs self assembled quantum dots embedded in GaAs bulk material. In our photoluminescence spectra, measured with high excitation, we observe five peaks below the wetting layer transition which we attribute to electron hole recombination from quantum dot levels of the same quantum number. Resonant excited photoluminescence experiments show clearly the existence of phonon enhanced carrier relaxation if the energy splitting between two different quantum dot levels matches a multiple of the available phonon energies. Therefore a maximum in the intensity of the resonantly excited photoluminescence does not necessarily occur when most of the dots are pumped resonantly into an excited state, the main criterion, however, is that the energy distance between the pumped levels and the levels below matches a multiple of the available phonon energies.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
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Proceedings of SPIE: The International Society for Optical Engineering. 1996. p. 185-194 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2694).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Excited states in InAs self-assembled quantum dots
AU - Schmidt, Klaus
AU - Medeiros-Ribeiro, G.
AU - Oestreich, Michael
AU - Petroff, Pierre M.
PY - 1996
Y1 - 1996
N2 - We use capacitance and photoluminescence spectroscopy to study the energy splitting of electron and hole states in InAs self assembled quantum dots embedded in GaAs bulk material. In our photoluminescence spectra, measured with high excitation, we observe five peaks below the wetting layer transition which we attribute to electron hole recombination from quantum dot levels of the same quantum number. Resonant excited photoluminescence experiments show clearly the existence of phonon enhanced carrier relaxation if the energy splitting between two different quantum dot levels matches a multiple of the available phonon energies. Therefore a maximum in the intensity of the resonantly excited photoluminescence does not necessarily occur when most of the dots are pumped resonantly into an excited state, the main criterion, however, is that the energy distance between the pumped levels and the levels below matches a multiple of the available phonon energies.
AB - We use capacitance and photoluminescence spectroscopy to study the energy splitting of electron and hole states in InAs self assembled quantum dots embedded in GaAs bulk material. In our photoluminescence spectra, measured with high excitation, we observe five peaks below the wetting layer transition which we attribute to electron hole recombination from quantum dot levels of the same quantum number. Resonant excited photoluminescence experiments show clearly the existence of phonon enhanced carrier relaxation if the energy splitting between two different quantum dot levels matches a multiple of the available phonon energies. Therefore a maximum in the intensity of the resonantly excited photoluminescence does not necessarily occur when most of the dots are pumped resonantly into an excited state, the main criterion, however, is that the energy distance between the pumped levels and the levels below matches a multiple of the available phonon energies.
UR - http://www.scopus.com/inward/record.url?scp=0029722879&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029722879
SN - 0819420689
SN - 9780819420688
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 185
EP - 194
BT - Proceedings of SPIE
T2 - Quantum Well and Superlattice Physics VI
Y2 - 29 January 1996 through 30 January 1996
ER -