Details
| Original language | English |
|---|---|
| Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 221-224 |
| Number of pages | 4 |
| ISBN (electronic) | 9781509027248 |
| Publication status | Published - 18 Nov 2016 |
| Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| Volume | 2016-November |
| ISSN (Print) | 0160-8371 |
Abstract
Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
Keywords
- junction formation, passivating contacts, pinholes, polysilicon, silicon, silicon oxide
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 221-224 7749582 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Evolution of oxide disruptions
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
AU - Tetzlaff, Dominic
AU - Krugener, Jan
AU - Larionova, Yevgeniya
AU - Reiter, Sina
AU - Turcu, Mircea
AU - Peibst, Robby
AU - Hohne, Uwe
AU - Kahler, Jan Dirk
AU - Wietler, Tobias
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
AB - Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
KW - junction formation
KW - passivating contacts
KW - pinholes
KW - polysilicon
KW - silicon
KW - silicon oxide
UR - http://www.scopus.com/inward/record.url?scp=85003571528&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2016.7749582
DO - 10.1109/pvsc.2016.7749582
M3 - Conference contribution
AN - SCOPUS:85003571528
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 221
EP - 224
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 5 June 2016 through 10 June 2016
ER -