Details
| Original language | English |
|---|---|
| Pages (from-to) | 792-799 |
| Number of pages | 8 |
| Journal | Applied surface science |
| Volume | 355 |
| Early online date | 15 Jul 2015 |
| Publication status | Published - 15 Nov 2015 |
Abstract
High fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.
Keywords
- Arsenic, Arsenic implantation, As-implanted silicon, Enhanced oxidation, Plasma immersion ion implantation (PIII)
ASJC Scopus subject areas
- Chemistry(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Applied surface science, Vol. 355, 15.11.2015, p. 792-799.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Evolution of arsenic in high fluence plasma immersion ion implanted silicon
T2 - Behavior of the as-implanted surface
AU - Vishwanath, V.
AU - Demenev, E.
AU - Giubertoni, D.
AU - Vanzetti, L.
AU - Koh, A. L.
AU - Steinhauser, G.
AU - Pepponi, G.
AU - Bersani, M.
AU - Meirer, F.
AU - Foad, M. A.
N1 - Funding Information: We thank Matthew Castle and Martin Hilkene for their assistance with performing the arsenic PIII. The activity of FM was supported by the Autonomous Province of Trento under the framework of the DART project, Marie Curie – COFUND Program. X-Ray absorption measurements were carried out at the Stanford Synchrotron Radiation Lightsource (SSRL), a national user facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences.
PY - 2015/11/15
Y1 - 2015/11/15
N2 - High fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.
AB - High fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.
KW - Arsenic
KW - Arsenic implantation
KW - As-implanted silicon
KW - Enhanced oxidation
KW - Plasma immersion ion implantation (PIII)
UR - http://www.scopus.com/inward/record.url?scp=84944339037&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2015.07.068
DO - 10.1016/j.apsusc.2015.07.068
M3 - Article
AN - SCOPUS:84944339037
VL - 355
SP - 792
EP - 799
JO - Applied surface science
JF - Applied surface science
SN - 0169-4332
ER -