Evaluation of the photocatalytic (visible-light) activity of cold gas sprayed TiO2 layers on metal sheets

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Authors

  • J. Freitag
  • D.W. Bahnemann

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Original languageEnglish
Pages (from-to)596-599
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number6
Early online date15 May 2014
Publication statusPublished - 20 Jun 2014

Abstract

The photocatalytic properties of titanium dioxide layers on metal sheets prepared via cold gas spraying have been investigated employing the ISO 22197-2 standard test for acetaldehyde degradation in the gas phase. The contact between the TiO 2 and the metal substrate can be described as a Schottky contact. A depletion region is formed at the semiconductor-metal interface leading to an enhanced separation of the photoinduced charge carriers. Thus, the lifetime of the e -/h + pair is prolonged. The variation of process parameters, such as temperature and pressure, during the CGS preparation leads to different photocatalytic properties of the obtained TiO 2 layers. Under high pressure and temperature even visible light active TiO 2 coatings are prepared. The CGS technique allows the formation of thin TiO 2 films without any binders exhibiting high photocatalytic activities in the same range as the pure powders employed for their preparation. Schematic diagram presenting the Schottky contact of an n-type semiconductor and met al. E f is the Fermi level, VB and CB are the valence and conduction band of the semiconductor, respectively. A proposed degradation pathway of acet-aldehyde at the solid/gas interface is depicted. (

Keywords

    Acetaldehyde degradation, Cold gas spraying, Photocatalysis, Titanium dioxides, Visible-light activity

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Evaluation of the photocatalytic (visible-light) activity of cold gas sprayed TiO2 layers on metal sheets. / Freitag, J.; Bahnemann, D.W.
In: Physica Status Solidi - Rapid Research Letters, Vol. 8, No. 6, 20.06.2014, p. 596-599.

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abstract = "The photocatalytic properties of titanium dioxide layers on metal sheets prepared via cold gas spraying have been investigated employing the ISO 22197-2 standard test for acetaldehyde degradation in the gas phase. The contact between the TiO 2 and the metal substrate can be described as a Schottky contact. A depletion region is formed at the semiconductor-metal interface leading to an enhanced separation of the photoinduced charge carriers. Thus, the lifetime of the e -/h + pair is prolonged. The variation of process parameters, such as temperature and pressure, during the CGS preparation leads to different photocatalytic properties of the obtained TiO 2 layers. Under high pressure and temperature even visible light active TiO 2 coatings are prepared. The CGS technique allows the formation of thin TiO 2 films without any binders exhibiting high photocatalytic activities in the same range as the pure powders employed for their preparation. Schematic diagram presenting the Schottky contact of an n-type semiconductor and met al. E f is the Fermi level, VB and CB are the valence and conduction band of the semiconductor, respectively. A proposed degradation pathway of acet-aldehyde at the solid/gas interface is depicted. (",
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AU - Freitag, J.

AU - Bahnemann, D.W.

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PY - 2014/6/20

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N2 - The photocatalytic properties of titanium dioxide layers on metal sheets prepared via cold gas spraying have been investigated employing the ISO 22197-2 standard test for acetaldehyde degradation in the gas phase. The contact between the TiO 2 and the metal substrate can be described as a Schottky contact. A depletion region is formed at the semiconductor-metal interface leading to an enhanced separation of the photoinduced charge carriers. Thus, the lifetime of the e -/h + pair is prolonged. The variation of process parameters, such as temperature and pressure, during the CGS preparation leads to different photocatalytic properties of the obtained TiO 2 layers. Under high pressure and temperature even visible light active TiO 2 coatings are prepared. The CGS technique allows the formation of thin TiO 2 films without any binders exhibiting high photocatalytic activities in the same range as the pure powders employed for their preparation. Schematic diagram presenting the Schottky contact of an n-type semiconductor and met al. E f is the Fermi level, VB and CB are the valence and conduction band of the semiconductor, respectively. A proposed degradation pathway of acet-aldehyde at the solid/gas interface is depicted. (

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KW - Photocatalysis

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