Details
| Original language | English |
|---|---|
| Title of host publication | SiliconPV 2019 |
| Subtitle of host publication | 9th International Conference on Crystalline Silicon Photovoltaics |
| Publisher | AIP Publishing LLC |
| ISBN (electronic) | 9780735418929 |
| Publication status | Published - 27 Aug 2019 |
| Event | 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019 - Leuven, Belgium Duration: 8 Apr 2019 → 10 Apr 2019 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Number | 1 |
| Volume | 2147 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
Carrier selective contacts are of growing interest in the development and optimization of high efficiency silicon solar cell concepts. In particular, the passivation mechanism of ultra-thin oxide layers in interaction with poly-Si layers came into focus and the origin of tunnel currents and the so called pinhole conductivity is discussed. Many process parameters and their influence on the passivation effect are not clear, yet. The present study investigates the electrical properties in Si/SiOx/poly-Si layer system from different processes. For this purpose, high-resolution electrical evaluation of the current path density through the interfacial oxide is investigated by conductive AFM using a newly developed image calculation software tool to determine the vertical current path density. We compared two thicknesses of poly-Si (n+ PECVD) layers each at optimum annealing temperature (corresponding to highest i-VOC). The influence of three annealing temperatures (at optimum passivation, below and above) is investigated for an ozone oxide and pinhole densities are analyzed by the TMAH method. Finally, the optimum properties of the layer stack for three interfacial oxides (each at optimum passivation) are studied.
ASJC Scopus subject areas
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SiliconPV 2019: 9th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing LLC, 2019. 040017 (AIP Conference Proceedings; Vol. 2147, No. 1).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM
AU - Richter, Susanne
AU - Larionova, Yevgeniya
AU - Großer, Stephan
AU - Menzel, Matthias
AU - Schulte-Huxel, Henning
AU - Peibst, Robby
AU - Brendel, Rolf
AU - Hagendorf, Christian
N1 - Funding Information: The authors gratefully acknowledge the financial support by the German Federal Ministry for Economic Affairs and Energy within the project NextStep (contract no. 0324171B and C).
PY - 2019/8/27
Y1 - 2019/8/27
N2 - Carrier selective contacts are of growing interest in the development and optimization of high efficiency silicon solar cell concepts. In particular, the passivation mechanism of ultra-thin oxide layers in interaction with poly-Si layers came into focus and the origin of tunnel currents and the so called pinhole conductivity is discussed. Many process parameters and their influence on the passivation effect are not clear, yet. The present study investigates the electrical properties in Si/SiOx/poly-Si layer system from different processes. For this purpose, high-resolution electrical evaluation of the current path density through the interfacial oxide is investigated by conductive AFM using a newly developed image calculation software tool to determine the vertical current path density. We compared two thicknesses of poly-Si (n+ PECVD) layers each at optimum annealing temperature (corresponding to highest i-VOC). The influence of three annealing temperatures (at optimum passivation, below and above) is investigated for an ozone oxide and pinhole densities are analyzed by the TMAH method. Finally, the optimum properties of the layer stack for three interfacial oxides (each at optimum passivation) are studied.
AB - Carrier selective contacts are of growing interest in the development and optimization of high efficiency silicon solar cell concepts. In particular, the passivation mechanism of ultra-thin oxide layers in interaction with poly-Si layers came into focus and the origin of tunnel currents and the so called pinhole conductivity is discussed. Many process parameters and their influence on the passivation effect are not clear, yet. The present study investigates the electrical properties in Si/SiOx/poly-Si layer system from different processes. For this purpose, high-resolution electrical evaluation of the current path density through the interfacial oxide is investigated by conductive AFM using a newly developed image calculation software tool to determine the vertical current path density. We compared two thicknesses of poly-Si (n+ PECVD) layers each at optimum annealing temperature (corresponding to highest i-VOC). The influence of three annealing temperatures (at optimum passivation, below and above) is investigated for an ozone oxide and pinhole densities are analyzed by the TMAH method. Finally, the optimum properties of the layer stack for three interfacial oxides (each at optimum passivation) are studied.
UR - http://www.scopus.com/inward/record.url?scp=85071527411&partnerID=8YFLogxK
U2 - 10.1063/1.5123844
DO - 10.1063/1.5123844
M3 - Conference contribution
AN - SCOPUS:85071527411
T3 - AIP Conference Proceedings
BT - SiliconPV 2019
PB - AIP Publishing LLC
T2 - 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019
Y2 - 8 April 2019 through 10 April 2019
ER -