Details
| Original language | English |
|---|---|
| Pages (from-to) | 237-239 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 592 |
| Issue number | Part B |
| Publication status | Published - 4 Jun 2015 |
| Externally published | Yes |
Abstract
In view of extended applications of ion sources towards improved high precision multilayer structures, the etching behavior for different optical coating materials and deposition techniques as well as the performance of an etching process in a multilayer structure were investigated. Etching stabilities of the oxide materials Ta2O5, TiO2, HfO2, Al2O3, and SiO2 as well as the fluoride materials MgF2 and LaF3 were considered in dependence of material type, deposition technique, and etching process. For etching of the single layers a radio frequency pumped ion source operated with Argon or Oxygen plasma is employed. The ions are extracted from the plasma by means of a three grid extraction system with adjustable energy in the range between a few and several hundred eV. The etching behavior of the various single layer systems was associated to the etch rates and evaluated under consideration of the sputter power, to enable a selection of more and less stable materials. As an example for the influence of etched interfaces in a multilayer, a high reflective system at 532 nm with modification between high and low index materials will be discussed. A significant absorption decrease due to the plasma treatment could be determined without affecting the damage threshold and total scattering of the model system.
Keywords
- Coating deposition techniques, Etching, Optical thin films
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: Thin Solid Films, Vol. 592, No. Part B, 04.06.2015, p. 237-239.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Etching behavior of optical thin films for different deposition techniques
AU - Alig, Thimotheus
AU - Günster, Stefan
AU - Ristau, Detlev
N1 - Funding information: The work was performed in the framework of the project “Cell-UV”. The project Cell-UV is carried out in the framework of the European program “Eurostars”. The financial support of the German partners by the Federal Ministry of Education and Research ( EUROSTARS E! 7721 - CELL-UV ) is gratefully acknowledged.
PY - 2015/6/4
Y1 - 2015/6/4
N2 - In view of extended applications of ion sources towards improved high precision multilayer structures, the etching behavior for different optical coating materials and deposition techniques as well as the performance of an etching process in a multilayer structure were investigated. Etching stabilities of the oxide materials Ta2O5, TiO2, HfO2, Al2O3, and SiO2 as well as the fluoride materials MgF2 and LaF3 were considered in dependence of material type, deposition technique, and etching process. For etching of the single layers a radio frequency pumped ion source operated with Argon or Oxygen plasma is employed. The ions are extracted from the plasma by means of a three grid extraction system with adjustable energy in the range between a few and several hundred eV. The etching behavior of the various single layer systems was associated to the etch rates and evaluated under consideration of the sputter power, to enable a selection of more and less stable materials. As an example for the influence of etched interfaces in a multilayer, a high reflective system at 532 nm with modification between high and low index materials will be discussed. A significant absorption decrease due to the plasma treatment could be determined without affecting the damage threshold and total scattering of the model system.
AB - In view of extended applications of ion sources towards improved high precision multilayer structures, the etching behavior for different optical coating materials and deposition techniques as well as the performance of an etching process in a multilayer structure were investigated. Etching stabilities of the oxide materials Ta2O5, TiO2, HfO2, Al2O3, and SiO2 as well as the fluoride materials MgF2 and LaF3 were considered in dependence of material type, deposition technique, and etching process. For etching of the single layers a radio frequency pumped ion source operated with Argon or Oxygen plasma is employed. The ions are extracted from the plasma by means of a three grid extraction system with adjustable energy in the range between a few and several hundred eV. The etching behavior of the various single layer systems was associated to the etch rates and evaluated under consideration of the sputter power, to enable a selection of more and less stable materials. As an example for the influence of etched interfaces in a multilayer, a high reflective system at 532 nm with modification between high and low index materials will be discussed. A significant absorption decrease due to the plasma treatment could be determined without affecting the damage threshold and total scattering of the model system.
KW - Coating deposition techniques
KW - Etching
KW - Optical thin films
UR - http://www.scopus.com/inward/record.url?scp=84944275251&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2015.06.004
DO - 10.1016/j.tsf.2015.06.004
M3 - Article
AN - SCOPUS:84944275251
VL - 592
SP - 237
EP - 239
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - Part B
ER -