Erratum: Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers

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Original languageEnglish
Pages (from-to)446
Number of pages1
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number1
Publication statusPublished - Jan 2001

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title = "Erratum: Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers",
author = "J. Schmidt and Aberle, {A. G.}",
year = "2001",
month = jan,
language = "English",
volume = "40",
pages = "446",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1",

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TY - JOUR

T1 - Erratum

T2 - Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers

AU - Schmidt, J.

AU - Aberle, A. G.

PY - 2001/1

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M3 - Comment/debate

AN - SCOPUS:0035056398

VL - 40

SP - 446

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

SN - 0021-4922

IS - 1

ER -

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