Details
| Original language | English |
|---|---|
| Pages (from-to) | 152-155 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 109 |
| Publication status | Published - 30 Mar 2013 |
Abstract
The electronic properties of mixed BaSr oxides were investigated both spectroscopically and by electrical measurements in MOS-diode structures on Si (0 0 1). The dielectric properties of crystalline Ba0.7Sr 0.3O turned out to be very good with a dielectric constant of ∈=21.8±0.2, interface trap densities 6-9 × 1010 eV-1 cm-2 near midgap, negligible capacitance-voltage hystereses smaller than 10 mV, low leakage currents (below 2 mA/cm-2 at 5 nm oxide thickness), and band offsets of 1 eV for both conduction and valence bands. At the smallest oxide thickness of 5 nm a capacitance equivalent thickness (CET) of 0.75 nm was achieved. Effective flatband voltages could be tuned by inserting an ultrathin Al layer between metal gate and oxide. Above 400 C the oxide is transformed into a silicate of defined stoichiometry.
Keywords
- Band offset, Crystalline oxide, High-k dielectrics, Interface trap density, Thermal stability
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronic Engineering, Vol. 109, 30.03.2013, p. 152-155.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial thin films of BaSrO as gate dielectric
AU - Islam, Saiful
AU - Müller-Sajak, D.
AU - Hofmann, Karl Rüdiger
AU - Pfnür, Herbert
PY - 2013/3/30
Y1 - 2013/3/30
N2 - The electronic properties of mixed BaSr oxides were investigated both spectroscopically and by electrical measurements in MOS-diode structures on Si (0 0 1). The dielectric properties of crystalline Ba0.7Sr 0.3O turned out to be very good with a dielectric constant of ∈=21.8±0.2, interface trap densities 6-9 × 1010 eV-1 cm-2 near midgap, negligible capacitance-voltage hystereses smaller than 10 mV, low leakage currents (below 2 mA/cm-2 at 5 nm oxide thickness), and band offsets of 1 eV for both conduction and valence bands. At the smallest oxide thickness of 5 nm a capacitance equivalent thickness (CET) of 0.75 nm was achieved. Effective flatband voltages could be tuned by inserting an ultrathin Al layer between metal gate and oxide. Above 400 C the oxide is transformed into a silicate of defined stoichiometry.
AB - The electronic properties of mixed BaSr oxides were investigated both spectroscopically and by electrical measurements in MOS-diode structures on Si (0 0 1). The dielectric properties of crystalline Ba0.7Sr 0.3O turned out to be very good with a dielectric constant of ∈=21.8±0.2, interface trap densities 6-9 × 1010 eV-1 cm-2 near midgap, negligible capacitance-voltage hystereses smaller than 10 mV, low leakage currents (below 2 mA/cm-2 at 5 nm oxide thickness), and band offsets of 1 eV for both conduction and valence bands. At the smallest oxide thickness of 5 nm a capacitance equivalent thickness (CET) of 0.75 nm was achieved. Effective flatband voltages could be tuned by inserting an ultrathin Al layer between metal gate and oxide. Above 400 C the oxide is transformed into a silicate of defined stoichiometry.
KW - Band offset
KW - Crystalline oxide
KW - High-k dielectrics
KW - Interface trap density
KW - Thermal stability
UR - http://www.scopus.com/inward/record.url?scp=84876836168&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2013.03.105
DO - 10.1016/j.mee.2013.03.105
M3 - Article
AN - SCOPUS:84876836168
VL - 109
SP - 152
EP - 155
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -