Details
| Original language | English |
|---|---|
| Title of host publication | Rare Earth Research and Applications |
| Pages | 301-327 |
| Number of pages | 27 |
| Publication status | Published - 2008 |
Abstract
We present the results of epitaxial rare earth oxide thin films for various applications in modern semiconductor industries. The films were grown by solid source molecular beam epitaxy technique on different silicon (Si) substrates. The electrical properties of epitaxial thin films demonstrate that such oxide could be one of the most promising candidates for future gate dielectric with much higher dielectric constant compare to SiO2, in complementary metal oxide semiconductor (CMOS) devices. The electrical properties were further improved significantly by controlled modification of interface layer composition viz. interface engineering. In this article, we will also show that the same epitaxial layer can also be successfully used to realize other novel devices such as nanocrystal memories, one of the most promising candidates for future nonvolatile, high density, and low operating-voltage memory applications.
ASJC Scopus subject areas
- Earth and Planetary Sciences(all)
- General Earth and Planetary Sciences
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Rare Earth Research and Applications. 2008. p. 301-327.
Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review
}
TY - CHAP
T1 - Epitaxial rare earth oxide thin film
T2 - Potential candidate for future microelectronic devices
AU - Laha, Apurba
AU - Bugiel, E.
AU - Osten, H. J.
AU - Fissel, Andreas
PY - 2008
Y1 - 2008
N2 - We present the results of epitaxial rare earth oxide thin films for various applications in modern semiconductor industries. The films were grown by solid source molecular beam epitaxy technique on different silicon (Si) substrates. The electrical properties of epitaxial thin films demonstrate that such oxide could be one of the most promising candidates for future gate dielectric with much higher dielectric constant compare to SiO2, in complementary metal oxide semiconductor (CMOS) devices. The electrical properties were further improved significantly by controlled modification of interface layer composition viz. interface engineering. In this article, we will also show that the same epitaxial layer can also be successfully used to realize other novel devices such as nanocrystal memories, one of the most promising candidates for future nonvolatile, high density, and low operating-voltage memory applications.
AB - We present the results of epitaxial rare earth oxide thin films for various applications in modern semiconductor industries. The films were grown by solid source molecular beam epitaxy technique on different silicon (Si) substrates. The electrical properties of epitaxial thin films demonstrate that such oxide could be one of the most promising candidates for future gate dielectric with much higher dielectric constant compare to SiO2, in complementary metal oxide semiconductor (CMOS) devices. The electrical properties were further improved significantly by controlled modification of interface layer composition viz. interface engineering. In this article, we will also show that the same epitaxial layer can also be successfully used to realize other novel devices such as nanocrystal memories, one of the most promising candidates for future nonvolatile, high density, and low operating-voltage memory applications.
UR - http://www.scopus.com/inward/record.url?scp=84895373969&partnerID=8YFLogxK
M3 - Contribution to book/anthology
AN - SCOPUS:84895373969
SN - 9781604562187
SP - 301
EP - 327
BT - Rare Earth Research and Applications
ER -