Details
| Original language | English |
|---|---|
| Pages (from-to) | 15-24 |
| Number of pages | 10 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 744 |
| Publication status | Published - 1 Apr 2003 |
| Event | Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: 2 Dec 2002 → 5 Dec 2002 |
Abstract
We show results for molecular beam epitaxial (MBE) growth of praseodymium oxide on Si. On Si(100) oriented surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr2O3 on Si(111). These layers can also be overgrown epitaxially with Si leading to novel tunnel structures. Crystalline Pr2O3 on Si(001) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr2O3/Si(001) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr2O3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Research Society Symposium - Proceedings, Vol. 744, 01.04.2003, p. 15-24.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Epitaxial praseodymium oxide
T2 - Quantum Confined Semiconductor Nanostructures
AU - Osten, H. J.
AU - Bugiel, E.
AU - Fissel, A.
PY - 2003/4/1
Y1 - 2003/4/1
N2 - We show results for molecular beam epitaxial (MBE) growth of praseodymium oxide on Si. On Si(100) oriented surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr2O3 on Si(111). These layers can also be overgrown epitaxially with Si leading to novel tunnel structures. Crystalline Pr2O3 on Si(001) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr2O3/Si(001) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr2O3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.
AB - We show results for molecular beam epitaxial (MBE) growth of praseodymium oxide on Si. On Si(100) oriented surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr2O3 on Si(111). These layers can also be overgrown epitaxially with Si leading to novel tunnel structures. Crystalline Pr2O3 on Si(001) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr2O3/Si(001) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr2O3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0038488688&partnerID=8YFLogxK
U2 - 10.1557/proc-744-m1.5
DO - 10.1557/proc-744-m1.5
M3 - Conference article
AN - SCOPUS:0038488688
VL - 744
SP - 15
EP - 24
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
Y2 - 2 December 2002 through 5 December 2002
ER -